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    共 6240件相关商品
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    BZX884 series
    BZX884-C16,315
    Voltage regulator diodes

    • Total power dissipation: Ptot ≤ 250 mW

    • Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

    • Two tolerance series: ± 2 % and ± 5 %

    • Leadless ultra small plastic package suitable for surface-mounted design

    • AEC-Q101 qualified

    1+:¥1.5513

    100+:¥0.5946

    300+:¥0.5946

    710,000
    数据手册
    BAS321
    BAS321-QX
    Q - General purpose diode

    • Small plastic SMD package

    • Switching speed: max. 50 ns

    • General application

    • Continuous reverse voltage: max. 200 V

    • Repetitive peak reverse voltage: max. 250 V

    • Repetitive peak forward current: max. 625 mA

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.8081

    100+:¥0.4362

    300+:¥0.4362

    597,000
    数据手册
    PESD1IVN24
    PESD1IVN24-AX
    A - ESD protection for In-vehicle networks

    • Reverse stand-off voltage: VRWM = 24 V

    • Low clamping voltage: VCL= 33 V at IPP = 3.5 A

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω)

    • ISO 7637-3: Pulse a: VS = -150 V / Pulse b: VS = +100 V

    • Ultra low leakage current: IRM < 1 nA

    • Qualified according to AEC-Q101 / Automotive grade

    1+:¥1.7119

    100+:¥0.6568

    300+:¥0.6568

    392,474
    数据手册
    PESD1CAN
    PESD1CAN,215
    CAN bus ESD protection diode

    • One small SOT23 package to protect two CAN bus lines

    • Peak pulse power, max.: PPP = 200 W at tp = 8/20 µs

    • Low clamping voltage: VCL = 40 V at IPP = 1 A

    • Ultra low leakage current, typ.: IRM <1 nA

    • Diode capacitance matching, typ.: ΔCd/Cd = 0.1 %

    • ESD protection up to 23 kV; IEC 61000-4-2, level 4

    • IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs

    • AEC-Q101 qualified

    1+:¥2.0301

    100+:¥1.1948

    300+:¥1.0854

    284,990
    数据手册
    PUMD3
    PUMD3-QX
    Q - 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥1.3048

    100+:¥0.6371

    300+:¥0.5316

    228,000
    数据手册
    BZX585
    BZX585-C15-QX
    Q series - Voltage regulator diodes

    • Non-repetitive peak reverse power dissipation: ≤ 40 W

    • Total power dissipation: ≤ 300 mW

    • Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

    • Two tolerance series: ± 2 % and ± 5 %

    • Low differential resistance

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.4366

    100+:¥0.3969

    300+:¥0.3608

    195,000
    数据手册
    PESD1IVN27A
    PESD1IVN27A-QX
    Q - ESD protection for In-vehicle networks

    • Reverse stand-off voltage: VRWM = 27 V

    • Low clamping voltage: VCL = 36 V at IPP = 3 A

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω)

    • ISO 7637-3: Pulse a: VS = -150 V / Pulse b: VS = +100 V

    • Ultra low leakage current: IRM < 1 nA

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥1.8993

    100+:¥0.7518

    300+:¥0.7518

    182,300
    数据手册
    74LVC1G08
    74LVC1G08GW-Q100,1
    Q100 - Single 2-input AND gate

    • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

      • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

    • Wide supply voltage range from 1.65 V to 5.5 V

    • High noise immunity

    • ±24 mA output drive (VCC = 3.0 V)

    • CMOS low power dissipation

    • Direct interface with TTL levels

    • Overvoltage tolerant inputs to 5.5 V

    • IOFF circuitry provides partial Power-down mode operation

    • Latch-up performance ≤ 250 mA

    • Complies with JEDEC standard:

      • JESD8-7 (1.65 V to 1.95 V)

      • JESD8-5 (2.3 V to 2.7 V)

      • JESD8C (2.7 V to 3.6 V)

      • JESD36 (4.5 V to 5.5 V)

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    1+:¥1.3623

    100+:¥0.6662

    300+:¥0.6662

    144,000
    数据手册
    PUMH18
    PUMH18,115
    50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 10 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥1.2231

    100+:¥0.5509

    300+:¥0.5509

    105,000
    数据手册
    BZX84J series
    BZX84J-B18,115
    Single Zener diodes

    • Non-repetitive peak reverse power dissipation: ≤ 40 W

    • Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

    • Total power dissipation: ≤ 550 mW

    • Two tolerance series: ±2 % and ±5 %

    • AEC-Q101 qualified

    • Low differential resistance

    • Small plastic package suitable for surface-mounted design

    1+:¥1.5513

    100+:¥0.7518

    300+:¥0.7518

    80,500
    数据手册
    PDTC114ET
    PDTC114ET-QR
    Q - 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.7973

    100+:¥0.4289

    300+:¥0.3366

    68,900
    数据手册
    PESD1CAN
    PESD1CAN-UX
    U - CAN bus ESD protection diode

    • One very small SOT323 package to protect two CAN bus lines

    • Low clamping voltage VCL = 35 V at IPP = 1 A

    • Typical diode capacitance matching ΔCd/Cd = 0.1 %

    • ESD protection up to 23 kV; IEC 61000-4-2, level 4

    • IEC 61000-4-5 (surge); IPPM = 3 A at tp = 8/20 μs

    • AEC-Q101 qualified

    1+:¥2.0087

    100+:¥1.1336

    300+:¥1.1336

    65,850
    数据手册
    PESD2IVN24
    PESD2IVN24-TR
    T - ESD protection for In-vehicle networks

    • Reverse stand-off voltage: VRWM = 24 V

    • Low clamping voltage: VCL= 33 V at IPP = 3.5 A

    • Typ. diode capacitance matching: ∆Cd/Cd = 0.1 %

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • ESD protection up to 30 kV (ISO 10605; C = 330 pF, R = 330 Ω)

    • ISO 7637-3: Pulse a: VS = -150 V / Pulse b: VS = +100 V

    • Ultra low leakage current: IRM < 1 nA

    • Qualified according to AEC-Q101 / Automotive grade

    1+:¥1.5712

    100+:¥0.6872

    300+:¥0.6872

    65,650
    数据手册
    PMEG6002ELD
    PMEG6002ELDYL
    40 V, 0.2 A low VF Schottky barrier rectifier

    • Average forward current: IF(AV) ≤ 0.2 A

    • Reverse voltage: VR ≤ 60 V

    • Low forward voltage VF ≤ 600 mV

    • AEC-Q101 qualified

    • Solderable side pads

    • Package height typ. 0.37 mm

    1+:¥1.7516

    100+:¥0.6498

    300+:¥0.6498

    59,987
    数据手册
    BSS84AKM
    BSS84AKM,315
    50 V, 230 mA P-channel Trench MOSFET

    • Logic-level compatible

    • Very fast switching

    • Trench MOSFET technology

    • ESD protection up to 1 kV

    • AEC-Q101 qualified

    1+:¥1.8014

    100+:¥0.6926

    300+:¥0.6926

    59,986
    数据手册
    BAS116GW
    BAS116GWX
    Low leakage switching diode

    • High switching speed: trr = 0.8 µs

    • Low leakage current: IR = 3 pA

    • Repetitive peak reverse voltage VRRM ≤ 85 V

    • Low capacitance: Cd = 2 pF

    • Small SMD plastic package

    • AEC-Q101 qualified

    1+:¥1.1317

    100+:¥0.5517

    300+:¥0.4600

    57,000
    数据手册

    新品

    PMEG100T10ELXD
    PMEG100T10ELXD-QX
    Q - 100 V, 1 A Trench Schottky barrier rectifier

    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Power flat lead plastic package with exposed heatsink for optimal thermal connection

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.1181

    100+:¥1.0640

    300+:¥1.0640

    54,000
    数据手册
    BZX84J series
    BZX84J-C3V3,115
    Single Zener diodes

    • Non-repetitive peak reverse power dissipation: ≤ 40 W

    • Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

    • Total power dissipation: ≤ 550 mW

    • Two tolerance series: ±2 % and ±5 %

    • AEC-Q101 qualified

    • Low differential resistance

    • Small plastic package suitable for surface-mounted design

    1+:¥1.3119

    100+:¥0.6397

    300+:¥0.5339

    51,000
    数据手册
    BC807
    BC807-40-QR
    Q series - 45 V, 500 mA PNP general-purpose transistors

    • High current

    • Three current gain selections

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥1.0859

    100+:¥0.5863

    300+:¥0.5862

    51,000
    数据手册
    PMEG10020ELR
    PMEG10020ELR-QX
    Q - 100 V, 2 A low leakage current Schottky barrier rectifier

    • Average forward current: IF(AV) ≤ 2 A

    • Reverse voltage: VR ≤ 100 V

    • Low forward voltage: VF = 770 mV

    • High power capability due to clip-bonding technology

    • Extremely low leakage current IR = 40 nA

    • High temperature Tj ≤ 175 °C

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.4064

    100+:¥1.2132

    300+:¥1.2132

    50,900
    数据手册