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    PESD1IVN24
    PESD1IVN24-AX
    A - ESD protection for In-vehicle networks

    • Reverse stand-off voltage: VRWM = 24 V

    • Low clamping voltage: VCL= 33 V at IPP = 3.5 A

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω)

    • ISO 7637-3: Pulse a: VS = -150 V / Pulse b: VS = +100 V

    • Ultra low leakage current: IRM < 1 nA

    • Qualified according to AEC-Q101 / Automotive grade

    1+:¥1.9453

    100+:¥0.7464

    300+:¥0.7464

    392,494
    数据手册
    BUK7Y3R5
    BUK7Y3R5-40E,115
    40E - N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56

    • Q101 Compliant

    • Repetitive avalanche rated

    • Suitable for thermally demanding environments due to 175 °C rating

    • True standard level gate with VGS(th ) rating of greater than 1 V at 175 °C

    1+:¥9.3355

    100+:¥7.1094

    300+:¥6.0020

    121,500
    数据手册
    PESD2CANFD24L
    PESD2CANFD24L-UX
    U - ESD protection for In-vehicle networks

    • Reverse stand-off voltage: VRWM = 24 V

    • Low clamping voltage: VCL= 30 V at IPP = 1 A

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • Ultra low capacitance: Cd = 10 pF

    • ESD protection up to 30 kV (ISO 10605; C = 150 pF; R = 330 Ω)

    • High temperature capability: Tj = 175 °C

    • AEC-Q101 qualified

    1+:¥2.2374

    100+:¥1.0419

    300+:¥1.0419

    105,000
    数据手册
    PMEG6002ELD
    PMEG6002ELDYL
    60 V, 0.2 A low VF MEGA Schottky barrier rectifier

    • Average forward current: IF(AV) ≤ 0.2 A

    • Reverse voltage: VR ≤ 60 V

    • Low forward voltage VF ≤ 600 mV

    • AEC-Q101 qualified

    • Solderable side pads

    • Package height typ. 0.37 mm

    1+:¥1.9905

    100+:¥0.7385

    300+:¥0.7385

    59,997
    数据手册
    BSS84AKM
    BSS84AKM,315
    50 V, 230 mA P-channel Trench MOSFET

    • Logic-level compatible

    • Very fast switching

    • Trench MOSFET technology

    • ESD protection up to 1 kV

    • AEC-Q101 qualified

    1+:¥2.0470

    100+:¥0.7871

    300+:¥0.7870

    59,986
    数据手册
    PESD1LIN
    PESD1LIN,115
    LIN-bus ESD protection diode

    • ESD protection of one automotive LIN-bus line

    • Asymmetrical diode configuration ensures an optimized protection against ElectroMagnetic Interferences (EMI) of a LIN Electronic Control Unit (ECU)

    • Max. peak pulse power: PPP = 160W at tp = 8/20 μs

    • Low clamping voltage: VCL = 40 V at IPP = 1 A

    • Ultra low leakage current: IRM < 1 nA

    • ESD protection of up to 23 kV

    • IEC 61000-4-2, level 4 (ESD)

    • IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 μs

    • AEC-Q101 qualified

    1+:¥2.3956

    100+:¥1.1142

    300+:¥1.1142

    50,880
    数据手册
    PMEG2005ELD
    PMEG2005ELD,315
    20 V, 0.5 A low VF MEGA Schottky barrier rectifier

    • Forward current: IF ≤ 0.5 A

    • AEC-Q101 qualified

    • Reverse voltage: VR ≤ 20 V

    • Solderable side pads

    • Low forward voltage: VF ≤ 500 mV

    • Package height typ. 0.37 mm

    • Low reverse current

    • Ultra small and leadless SMD plastic package

    1+:¥2.2956

    100+:¥0.8763

    300+:¥0.8763

    30,000
    数据手册
    BZX884 series
    BZX884-B3V3,315
    Voltage regulator diodes

    • Total power dissipation: Ptot ≤ 250 mW

    • Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

    • Two tolerance series: ± 2 % and ± 5 %

    • Leadless ultra small plastic package suitable for surface-mounted design

    • AEC-Q101 qualified

    1+:¥1.4594

    100+:¥0.6164

    300+:¥0.6164

    30,000
    数据手册
    BAS21LD
    BAS21LDYL
    High-voltage switching diode

    • High switching speed: trr ≤ 50 ns

    • Low leakage current: IR ≤ 100 nA

    • High reverse voltage VR ≤ 200 V

    • Low capacitance: Cd ≤ 2 pF

    • Ultra small and leadless SMD plastic package

    • Soldarable side pads

    • Package height typ. 0.37 mm

    • AEC-Q101 qualified

    1+:¥1.4594

    100+:¥0.5351

    300+:¥0.5351

    30,000
    数据手册
    BAS316
    BAS316-QF
    Q - High-speed switching diode

    • High switching speed: trr ≤ 4 ns

    • Low capacitance

    • Low leakage current

    • Reverse voltage: VR ≤ 100 V

    • Repetitive peak reverse voltage: VRRM ≤ 100 V

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.7701

    100+:¥0.2740

    300+:¥0.2740

    29,960
    数据手册
    PESD5V0C1ULS
    PESD5V0C1ULS-QYL
    Q - Extremely low clamping unidirectional ESD protection diode

    • Unidirectional ESD protection of one line

    • Ultra low capacitance: Cd < 0.6 pF

    • ESD protection starting from 15 kV (IEC 61000-4-2; ISO10605)

    • Deep snap-back combined with dynamic resistance of 0.3 Ohm

    • DFN1006BD-2 package with side-wettable flanks

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥1.8323

    100+:¥0.9498

    300+:¥0.9498

    29,700
    数据手册
    PBSS5540X
    PBSS5540X,135
    40 V, 5 A PNP low VCEsat (BISS) transistor

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability: IC and ICM

    • High efficiency leading to less heat generation.

    • AEC-Q101 qualified

    1+:¥2.9510

    100+:¥2.0244

    300+:¥1.5611

    24,000
    数据手册
    PBSS4540X
    PBSS4540X,135
    40 V, 5 A NPN low VCEsat (BISS) transistor

    • High hFE and low VCEsat at high current operation

    • High collector current capability: IC maximum 4 A

    • High efficiency leading to less heat generation.

    • AEC-Q101 qualified

    1+:¥2.8154

    100+:¥2.0922

    300+:¥1.6176

    23,980
    数据手册
    vp_MMBZ5V6AL
    MMBZ5V6AL,215
    Low capacitance unidirectional double ESD protection diode

    • Unidirectional ESD protection of two lines

    • Bidirectional ESD protection of one line

    • Low diode capacitance: Cd ≤ 280 pF

    • Rated peak pulse power: PPPM = 24 W

    • Ultra low leakage current: IRM = 5 µA

    • ESD protection up to 30 kV (contact discharge)

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61643-321

    • AEC-Q101 qualified

    1+:¥1.9679

    100+:¥0.7543

    300+:¥0.7543

    18,000
    数据手册
    1PS70SB82
    1PS70SB84,115
    Schottky barrier (double) diodes

    • Low forward voltage

    • Very small SMD plastic package

    • Low diode capacitance.

    • AEC-Q101 qualified

    1+:¥2.3860

    100+:¥1.6628

    300+:¥1.0865

    18,000
    数据手册
    PESD3V3U1UB
    PESD3V3U1UB,115
    Ultra low capacitance unidirectional ESD protection diodes
    • Unidirectional ESD protection of one line
    • ESD protection up to 9 kV
    • Low diode capacitance: Cd = 2.6 pF
    • IEC 61000-4-2; level 4 (ESD)
    • Very low leakage current: IRM = 1 nA
    • AEC-Q101 qualified

    1+:¥2.6685

    100+:¥0.9825

    300+:¥0.9825

    17,999
    数据手册
    PESD2ETH1GXT
    PESD2ETH1GXT-QR
    Q - ESD protection for In-vehicle networks

    • Fully OPEN Alliance IEEE 100BASE-T1 and 1000BASE-T1 compliant

    • High trigger voltage: Vt1 = 100 V min

    • Low capacitance: Cd < 1.3 pF

    • ESD protection up to 30 kV (IEC 61000-4-2; ISO10605)

    • 1000 contact discharges (OPEN Alliance specification) with 15 kV (IEC 61000-4-2)

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥3.1996

    100+:¥2.0018

    300+:¥1.6515

    17,990
    数据手册
    74AVC2T245
    74AVC2T245GU-Q100X
    Q100 - 2-bit dual supply translating transceiver with configurable voltage translation; 3-state

    • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

      • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

    • Wide supply voltage range:

      • VCC(A): 0.8 V to 3.6 V

      • VCC(B): 0.8 V to 3.6 V

    • Complies with JEDEC standards:

      • JESD8-12 (0.8 V to 1.3 V)

      • JESD8-11 (0.9 V to 1.65 V)

      • JESD8-7 (1.2 V to 1.95 V)

      • JESD8-5 (1.8 V to 2.7 V)

      • JESD8-B (2.7 V to 3.6 V)

    • ESD protection:

      • HBM JESD22-A114E Class 3B exceeds 8000 V

      • CDM JESD22-C101C exceeds 1000 V

    • Maximum data rates:

      • 380 Mbit/s (≥ 1.8 V to 3.3 V translation)

      • 200 Mbit/s (≥ 1.1 V to 3.3 V translation)

      • 200 Mbit/s (≥ 1.1 V to 2.5 V translation)

      • 200 Mbit/s (≥ 1.1 V to 1.8 V translation)

      • 150 Mbit/s (≥ 1.1 V to 1.5 V translation)

      • 100 Mbit/s (≥ 1.1 V to 1.2 V translation)

    • Suspend mode

    • Latch-up performance exceeds 100 mA per JESD 78 Class II

    • Inputs accept voltages up to 3.6 V

    • IOFF circuitry provides partial Power-down mode operation

    1+:¥5.5839

    100+:¥4.2166

    300+:¥3.5725

    15,900
    数据手册
    BCM847QAS
    BCM847QASZ
    45 V, 100 mA NPN/NPN matched double transistors

    • Reduces component count

    • Reduces pick and place costs

    • Low package height of 0.37 mm

    • Current gain matching

    • Base-emitter voltage matching

    • Application-optimized pinout

    • AEC-Q101 qualified

    1+:¥2.5555

    100+:¥1.3690

    300+:¥1.3690

    15,000
    数据手册
    PESD2IVN
    PESD2IVN-UX
    U - In-vehicle network ESD protection diode

    • One very small SOT323 package to protect two in-vehicle network lines

    • Low clamping voltage: VCL = 38 V at IPP = 1 A

    • Typical diode capacitance matching ΔCd/Cd = 0.1 %

    • ESD protection up to 18 kV; IEC 61000-4-2, level 4

    • IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs

    • AEC-Q101 qualified

    1+:¥2.5329

    100+:¥1.0413

    300+:¥1.0413

    12,000
    数据手册