High switching speed: t_rr ≤ 50 ns

Low capacitance: C_d ≤2 pF

Low leakage current

Reverse voltage: V_R ≤ 300 V

Repetitive peak reverse voltage: V_RRM ≤ 300 V

Very small and flat lead SMD plastic package

Excellent coplanarity and improved thermal behavior

Qualified according to AEC-Q101 and recommended for use in automotive applications

High switching speed: t_rr ≤ 50 ns

High reverse voltage: V_R ≤ 300 V

Repetitive peak forward current: I_FRM ≤ 1 A

Ultra small SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

100 mA output current capability

Built-in bias resistors

Simplifies circuit design

Reduces component count

Reduces pick and place costs

AEC-Q101 qualified

Reverse stand-off voltage: V_RWM = 24 V

Low clamping voltage: V_CL= 33 V at I_PP = 3.5 A

ESD protection up to 30 kV (IEC 61000-4-2)

ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω)

ISO 7637-3: Pulse a: V_S = -150 V / Pulse b: V_S = +100 V

Ultra low leakage current: I_RM < 1 nA

Qualified according to AEC-Q101 / Automotive grade

Logic-level compatible

Very fast switching

Trench MOSFET technology

ESD protection up to 1.5 kV

AEC-Q101 qualified

Reverse stand-off voltage: V_RWM = 27 V

Low clamping voltage: V_CL = 36 V at I_PP = 3 A

ESD protection up to 30 kV (IEC 61000-4-2)

ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω)

ISO 7637-3: Pulse a: V_S = -150 V / Pulse b: V_S = +100 V

Ultra low leakage current: I_RM < 1 nA

Qualified according to AEC-Q101 and recommended for use in automotive applications

High switching speed: t_rr ≤ 50 ns

Reverse voltage: V_R ≤ 200 V

Repetitive peak reverse voltage: V_RRM ≤ 250 V

Small SMD plastic package

Low capacitance: C_d ≤ 5 pF

Repetitive peak forward current: I_FRM ≤ 1 A

AEC-Q101 qualified

Non-repetitive peak reverse power dissipation: ≤ 40 W

Total power dissipation: ≤ 300 mW

Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

Two tolerance series: ± 2 % and ± 5 %

Low differential resistance

Qualified according to AEC-Q101 and recommended for use in automotive applications

One small SOT23 package to protect two CAN bus lines

Peak pulse power, max.: P_PP = 200 W at t_p = 8/20 µs

Low clamping voltage: V_CL = 40 V at I_PP = 1 A

Ultra low leakage current, typ.: I_RM <1 nA

Diode capacitance matching, typ.: ΔC_d/C_d = 0.1 %

ESD protection up to 23 kV; IEC 61000-4-2, level 4

IEC 61000-4-5 (surge); I_PP = 3 A at t_p = 8/20 µs

AEC-Q101 qualified

Small plastic SMD package

Switching speed: max. 50 ns

General application

Continuous reverse voltage: max. 200 V

Repetitive peak reverse voltage: max. 250 V

Repetitive peak forward current: max. 625 mA

Qualified according to AEC-Q101 and recommended for use in automotive applications

Bidirectional ESD protection of one line

Femtofarad capacitance: C_d = 400 fF

Low ESD clamping voltage: 30 V at 30 ns and ± 8 kV

Very low leakage current: I_RM < 1 nA

ESD protection up to 10 kV

IEC 61000-4-2; level 4 (ESD)

Qualified according to AEC-Q101 and recommended for use in automotive applications

100 mA output current capability

Built-in bias resistors

Simplifies circuit design

Reduces component count

Reduces pick and place costs

Qualified according to AEC-Q101 and recommended for use in automotive applications

Automotive product qualification in accordance with AEC-Q100 (Grade 1)

• Specified from -40 °C to +85 °C and from -40 °C to +125 °C

Wide supply voltage range from 1.65 V to 5.5 V

High noise immunity

±24 mA output drive (V_CC = 3.0 V)

CMOS low power dissipation

Direct interface with TTL levels

Overvoltage tolerant inputs to 5.5 V

I_OFF circuitry provides partial Power-down mode operation

Latch-up performance ≤ 250 mA

Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

High switching speed: t_rr ≤ 50 ns

Low leakage current: I_R ≤ 100 nA

High reverse voltage V_R ≤ 200 V

Low capacitance: C_d ≤ 2 pF

Small SMD plastic package

AEC-Q101 qualified

100 mA output current capability

Built-in bias resistors

Simplifies circuit design

Reduces component count

Reduces pick and place costs

AEC-Q101 qualified

100 mA output current capability

Built-in bias resistors

Simplifies circuit design

Reduces component count

Reduces pick and place costs

Qualified according to AEC-Q101 and recommended for use in automotive applications

Reverse stand-off voltage: V_RWM = 24 V

Low clamping voltage: V_CL= 33 V at I_PP = 3.5 A

Typ. diode capacitance matching: ∆C_d/C_d = 0.1 %

ESD protection up to 30 kV (IEC 61000-4-2)

ESD protection up to 30 kV (ISO 10605; C = 330 pF, R = 330 Ω)

ISO 7637-3: Pulse a: V_S = -150 V / Pulse b: V_S = +100 V

Ultra low leakage current: I_RM < 1 nA

Qualified according to AEC-Q101 / Automotive grade

General-purpose transistors

SMD plastic packages

AEC-Q101 qualified

Low-voltage stabilization

Forward voltage range: 580 to 960 mV

Total power dissipation: max. 250 mW.

AEC-Q101 qualified

Average forward current: I_F(AV) ≤ 0.2 A

Reverse voltage: V_R ≤ 60 V

Low forward voltage V_F ≤ 600 mV

AEC-Q101 qualified

Solderable side pads

Package height typ. 0.37 mm