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    共 539件相关商品
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    vp_BC817_SER
    BC817-16,215
    45 V, 500 mA NPN general-purpose transistors

    • High current

    • Three current gain selections

    1+:¥0.7848

    100+:¥0.4225

    300+:¥0.3319

    405,000
    数据手册
    BCP56T Series
    BCP56-16TF
    80 V, 1 A NPN medium power transistors
    • High collector current capability IC and ICM
    • Three current gain selections
    • High power dissipation capability
    • AEC-Q101 qualified

    1+:¥0.7400

    100+:¥0.3600

    300+:¥0.3600

    303,980
    数据手册
    vp_BC807W_SER
    BC807-40W,115
    45 V, 500 mA PNP general-purpose transistors

    • High current

    • Three current gain selections

    1+:¥0.8094

    100+:¥0.4366

    300+:¥0.4366

    153,000
    数据手册
    vp_BC807_SER
    BC807-40,215
    45 V, 500 mA PNP general-purpose transistors

    • High current

    • Three current gain selections

    1+:¥0.5658

    100+:¥0.3510

    300+:¥0.3510

    144,000
    数据手册
    vp_BC847BS
    BC847BS,115
    45 V, 100 mA NPN/NPN general-purpose transistor

    • Low collector capacitance

    • Low collector-emitter saturation voltage

    • Closely matched current gain

    • Reduces number of components and board space

    • No mutual interference between the transistors

    1+:¥1.1959

    100+:¥0.5832

    300+:¥0.4862

    33,000
    数据手册
    PMBT3904
    PMBT3904,215
    40 V, 200 mA NPN switching transistor

    1+:¥0.4366

    100+:¥0.2287

    300+:¥0.2287

    30,000
    数据手册
    PMBT4401
    PMBT4401,185
    40 V, 600 mA NPN switching transistor

    • High current (max. 600 mA)

    • Low voltage (max. 40 V)

    • AEC-Q101 qualified

    1+:¥0.9126

    100+:¥0.4959

    300+:¥0.4958

    30,000
    数据手册
    PMBT3904QA
    PMBT2222AMYL
    40 V, 600 mA NPN switching transistor

    • High current (max. 600 mA)

    • Low voltage (max. 40V)

    • Leadless ultra small SMD plastic package

    • Low package height of 0.50 mm

    • Power dissipation comparable to SOT23

    1+:¥1.0158

    100+:¥0.3843

    300+:¥0.3843

    30,000
    数据手册
    BC807L
    BC807-25LR
    45 V, 500 mA PNP general-purpose transistors

    • High current

    • Three current gain selections

    • AEC-Q101 qualified

    1+:¥0.1008

    100+:¥0.0636

    300+:¥0.0636

    30,000
    数据手册
    PMBTA06
    PMBTA06,215
    NPN general purpose transistor

    • High current (max. 500 mA)

    • Low voltage (max. 80 V)

    1+:¥0.8452

    100+:¥0.4296

    300+:¥0.4296

    27,000
    数据手册
    PBHV9050T
    PBHV9050T,215
    500 V, 150 mA PNP high-voltage low VCEsat transistor

    • High voltage

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High collector current gain (hFE) at high IC

    1+:¥2.3965

    100+:¥1.3027

    300+:¥1.3027

    18,000
    数据手册
    BC847BVN
    BC847BVN,115
    45 V, 100 mA NPN/PNP general purpose transistor

    • 300 mW total power dissipation

    • Very small 1.6 mm x 1.2 mm ultra thin package

    • Replaces two SC-75/SC-89 packaged transistors on same PCB area

    • Reduced required PCB area

    • Reduced pick and place costs

    1+:¥1.9903

    100+:¥0.8428

    300+:¥0.8428

    16,000
    数据手册
    vp_BC847x_SER
    BC847C,215
    45 V, 100 mA NPN general-purpose transistors

    • General-purpose transistors

    • SMD plastic packages

    • Three different gain selections

    1+:¥0.4433

    100+:¥0.2379

    300+:¥0.1869

    15,000
    数据手册
    vp_BC856_BC857_BC858
    BC857A,215
    65 V, 100 mA PNP general-purpose transistors

    • Low current (max. 100 mA)

    • Low voltage (max. 65 V)

    1+:¥0.6061

    100+:¥0.2123

    300+:¥0.2123

    12,000
    数据手册
    BC847BV
    BC847BV,115
    NPN general purpose double transistor

    • 300 mW total power dissipation

    • Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package

    • Excellent coplanarity due to straight leads

    • Low collector capacitance

    • Improved thermal behaviour due to flat leads

    • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors

    • Reduces required board space

    • Reduces pick and place costs

    1+:¥2.1196

    100+:¥1.2843

    300+:¥1.2842

    12,000
    数据手册
    PMBT2222AMB
    PMBT2222AMBYL
    40 V, 600 mA NPN switching transistor

    • High current (max. 600 mA)

    • Low voltage (max. 40V)

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    • Power dissipation comparable to SOT23

    1+:¥1.2231

    100+:¥0.6156

    300+:¥0.6156

    10,000
    数据手册
    PBSS3515M
    PBSS3515M,315
    15 V, 0.5 A PNP low VCEsat (BISS) transistor

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High efficiency leading to reduced heat generation

    • Reduced printed-circuit board requirements.

    • AEC-Q101 qualified

    1+:¥1.8496

    100+:¥0.7021

    300+:¥0.7021

    10,000
    数据手册
    PBSS2515M
    PBSS2515M,315
    15 V, 0.5 A NPN low VCEsat (BISS) transistor

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High efficiency leading to reduced heat generation

    • Reduced printed-circuit board requirements.

    • AEC-Q101 qualified

    1+:¥1.8496

    100+:¥0.7021

    300+:¥0.7021

    10,000
    数据手册
    BCX54 series
    BCP54,115
    45 V, 1 A NPN medium power transistors

    • High collector current capability IC and ICM

    • Three current gain selections

    • High power dissipation capability

    • AEC-Q101 qualified

    1+:¥2.0575

    100+:¥1.0371

    300+:¥0.9189

    10,000
    数据手册
    PBSS5240T
    PBSS5240T,215
    40 V, 2 A PNP low VCEsat transistor

    • Low collector-emitter saturation voltage

    • High current capability

    • Improved device reliability due to reduced heat generation

    1+:¥2.0500

    100+:¥0.9362

    300+:¥0.9362

    9,000
    数据手册