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    共 348件相关商品
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    PMBT4401
    PMBT4401,185
    40 V, 600 mA NPN switching transistor

    • High current (max. 600 mA)

    • Low voltage (max. 40 V)

    • AEC-Q101 qualified

    1+:¥1.0370

    100+:¥0.5635

    300+:¥0.5635

    30,000
    数据手册
    PMBT3904QA
    PMBT2222AMYL
    40 V, 600 mA NPN switching transistor

    • High current (max. 600 mA)

    • Low voltage (max. 40V)

    • Leadless ultra small SMD plastic package

    • Low package height of 0.50 mm

    • Power dissipation comparable to SOT23

    1+:¥1.1543

    100+:¥0.4368

    300+:¥0.4367

    30,000
    数据手册
    BC807L
    BC807-25LR
    45 V, 500 mA PNP general-purpose transistors

    • High current

    • Three current gain selections

    • AEC-Q101 qualified

    1+:¥0.7729

    100+:¥0.4882

    300+:¥0.4882

    30,000
    数据手册
    BC847BVN
    BC847BVN,115
    45 V, 100 mA NPN/PNP general purpose transistor

    • 300 mW total power dissipation

    • Very small 1.6 mm x 1.2 mm ultra thin package

    • Replaces two SC-75/SC-89 packaged transistors on same PCB area

    • Reduced required PCB area

    • Reduced pick and place costs

    1+:¥2.2617

    100+:¥0.9577

    300+:¥0.9577

    16,000
    数据手册
    vp_BC856_BC857_BC858
    BC857A,215
    65 V, 100 mA PNP general-purpose transistors

    • Low current (max. 100 mA)

    • Low voltage (max. 65 V)

    1+:¥0.6887

    100+:¥0.2413

    300+:¥0.2413

    12,000
    数据手册
    BC847BV
    BC847BV,115
    NPN general purpose double transistor

    • 300 mW total power dissipation

    • Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package

    • Excellent coplanarity due to straight leads

    • Low collector capacitance

    • Improved thermal behaviour due to flat leads

    • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors

    • Reduces required board space

    • Reduces pick and place costs

    1+:¥2.4086

    100+:¥1.4594

    300+:¥1.4594

    12,000
    数据手册
    PMBT2222AMB
    PMBT2222AMBYL
    40 V, 600 mA NPN switching transistor

    • High current (max. 600 mA)

    • Low voltage (max. 40V)

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    • Power dissipation comparable to SOT23

    1+:¥1.3899

    100+:¥0.6995

    300+:¥0.6995

    10,000
    数据手册
    PBSS3515M
    PBSS3515M,315
    15 V, 0.5 A PNP low VCEsat (BISS) transistor

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High efficiency leading to reduced heat generation

    • Reduced printed-circuit board requirements.

    • AEC-Q101 qualified

    1+:¥2.1018

    100+:¥0.7978

    300+:¥0.7978

    10,000
    数据手册
    PBSS2515M
    PBSS2515M,315
    15 V, 0.5 A NPN low VCEsat (BISS) transistor

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High efficiency leading to reduced heat generation

    • Reduced printed-circuit board requirements.

    • AEC-Q101 qualified

    1+:¥2.1018

    100+:¥0.7978

    300+:¥0.7978

    10,000
    数据手册
    PBSS8510PA
    PBSS8510PA,115
    100 V, 5.2 A NPN low V_CEsat (BISS) transistor

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

    • Exposed heat sink for excellent thermal and electrical conductivity

    • Leadless small SMD plastic package with medium power capability

    1+:¥3.1996

    100+:¥2.3747

    300+:¥1.8436

    9,000
    数据手册
    PBSS5240T
    PBSS5240T,215
    40 V, 2 A PNP low VCEsat transistor

    • Low collector-emitter saturation voltage

    • High current capability

    • Improved device reliability due to reduced heat generation

    1+:¥2.3295

    100+:¥1.0639

    300+:¥1.0639

    9,000
    数据手册
    PBHV9040T
    PBHV9040T,215
    500 V, 0.25 A PNP high-voltage low VCEsat transistor

    • High voltage

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High collector current gain (hFE) at high IC

    • Small SMD plastic package

    1+:¥2.4086

    100+:¥1.2221

    300+:¥1.2221

    9,000
    数据手册
    PBHV8118T
    PBHV8118T,215
    180 V, 1 A NPN high-voltage low VCEsat transistor

    • High voltage

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High collector current gain (hFE) at high IC

    • AEC-Q101 qualified

    • Small SMD plastic package

    1+:¥2.7024

    100+:¥1.4255

    300+:¥1.4255

    9,000
    数据手册
    PMBT3904RA
    PMBT3904RAZ
    40 V, 200 mA double NPN switching transistor

    • Leadless ultra small SMD plastic package

    • Reduces component count

    • Reduces pick and place costs

    • Low package height of 0.5 mm

    1+:¥1.9662

    100+:¥0.9277

    300+:¥0.9277

    5,000
    数据手册
    PMBT3904QA
    PMBT3904QAZ
    40 V, 200 mA NPN switching transistor

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    • Suitable for Automatic Optical Inspection (AOI) of solder joint

    • Power dissipation comparable to SOT23

    1+:¥1.5255

    100+:¥0.6995

    300+:¥0.6995

    5,000
    数据手册
    PMBT2222AMB
    PMBT2222AQAZ
    40 V, 600 mA NPN switching transistor

    • High current (max. 600 mA)

    • Low voltage (max. 40V)

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    • Suitable for Automatic Optical Inspection (AOI) of solder joint

    1+:¥1.8645

    100+:¥0.7729

    300+:¥0.7729

    5,000
    数据手册
    BC857xQC series
    BC857CQCZ
    45 V, 100 mA PNP general-purpose transistors

    • High power dissipation capability

    • Suitable for Automatic Optical Inspection (AOI) of solder joint

    • Smaller footprint compared to conventional leaded SMD packages

    • Low package height of 0.5 mm

    1+:¥1.3899

    100+:¥0.8870

    300+:¥0.8871

    5,000
    数据手册
    BC857xQC series
    BC857BQCZ
    45 V, 100 mA PNP general-purpose transistors

    • High power dissipation capability

    • Suitable for Automatic Optical Inspection (AOI) of solder joint

    • Smaller footprint compared to conventional leaded SMD packages

    • Low package height of 0.5 mm

    1+:¥1.3899

    100+:¥0.8870

    300+:¥0.8871

    5,000
    数据手册
    BC857xQC series
    BC857AQCZ
    45 V, 100 mA PNP general-purpose transistors

    • High power dissipation capability

    • Suitable for Automatic Optical Inspection (AOI) of solder joint

    • Smaller footprint compared to conventional leaded SMD packages

    • Low package height of 0.5 mm

    1+:¥1.3899

    100+:¥0.8870

    300+:¥0.8871

    5,000
    数据手册
    BC856xQC series
    BC856BQCZ
    65 V, 100 mA PNP general-purpose transistors

    • High power dissipation capability

    • Suitable for Automatic Optical Inspection (AOI) of solder joint

    • Smaller footprint compared to conventional leaded SMD packages

    • Low package height of 0.5 mm

    1+:¥1.3899

    100+:¥0.8870

    300+:¥0.8871

    5,000
    数据手册