- 产品
- 描述
- 价格
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- 数据手册
- 操作
PMCM4401VPEZ12 V, P-channel Trench MOSFETLow threshold voltage
Ultra small package: 0.78 × 0.78 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥2.1671
100+:¥1.3020
300+:¥1.2053
- 180,000
- 数据手册
PMH950UPEH20 V, P-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm
1+:¥1.6721
100+:¥0.9064
300+:¥0.9064
- 39,999
- 数据手册
PMZB200UNEYL30 V, N-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Ultra thin package profile of 0.37 mm
1+:¥1.6721
100+:¥0.8000
300+:¥0.8000
- 30,000
- 数据手册
PMCM4402UPEZ20 V, P-channel Trench MOSFETLow threshold voltage
Ultra small package 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥1.2246
100+:¥0.7712
300+:¥0.7712
- 27,000
- 数据手册
PMGD175XNEX30 V, Dual N-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥2.3682
100+:¥1.1649
300+:¥1.1649
- 18,000
- 数据手册
NX1029X,11560 / 50 V, 330 / 170 mA N/P-channel Trench MOSFETLogic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)
1+:¥2.1196
100+:¥1.2843
300+:¥1.2842
- 16,000
- 数据手册
PMXB40UNEZ12 V, N-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 34 mΩ
Very low threshold voltage of 0.65 V for portable applications
1+:¥1.0154
100+:¥0.4640
300+:¥0.4640
- 15,000
- 数据手册
PMPB07R3ENAX30 V, N-channel Trench MOSFETLogic-level compatible
Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Exposed drain pad for excellent thermal conduction
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
1+:¥3.1637
100+:¥2.3383
300+:¥1.8212
- 12,000
- 数据手册
BSH201,215P-channel vertical D-MOS logic level FETSaves PCB space due to small footprint
Suitable for high frequency applications due to fast switching characteristics
Suitable for logic level gate drive sources
Suitable for low gate drive sources
1+:¥2.2588
100+:¥1.1253
300+:¥1.1253
- 12,000
- 数据手册
PMZB950UPEYL20 V, P-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
1+:¥2.3766
100+:¥0.8950
300+:¥0.8950
- 10,000
- 数据手册
PMZB950UPELYL20 V, P-channel Trench MOSFETLow leakage current
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
1+:¥1.8993
100+:¥0.8522
300+:¥0.8522
- 10,000
- 数据手册
PMZB670UPE,31520 V, single P-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile of 0.37 mm
1+:¥2.3965
100+:¥0.9019
300+:¥0.9019
- 10,000
- 数据手册
PMZB600UNEYL20 V, N-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
1+:¥2.0087
100+:¥0.7736
300+:¥0.7736
- 10,000
- 数据手册
PMZB600UNELYL20 V, N-channel Trench MOSFETLow leakage current
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
1+:¥1.7501
100+:¥0.7448
300+:¥0.7448
- 10,000
- 数据手册
PMZB350UPE,31520 V, single P-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
1.8 kV ESD protected
1+:¥2.4860
100+:¥0.9596
300+:¥0.9596
- 10,000
- 数据手册
PMZB290UNE2YL20 V, N-channel Trench MOSFETTrench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Ultra thin package profile of 0.37 mm
1+:¥1.7203
100+:¥0.7160
300+:¥0.7160
- 10,000
- 数据手册
PMZB150UNEYL20 V, N-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Ultra thin package profile of 0.37 mm
1+:¥2.1380
100+:¥0.9596
300+:¥0.9596
- 10,000
- 数据手册