- 产品
- 描述
- 价格
- 库存
- 数据手册
- 操作
PMH950UPEH20 V, P-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm
1+:¥1.9001
100+:¥1.0300
300+:¥1.0300
- 39,999
- 数据手册
PMZB200UNEYL30 V, N-channel Trench MOSFETVery fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Ultra thin package profile of 0.37 mm
1+:¥1.9001
100+:¥0.9091
300+:¥0.9091
- 30,000
- 数据手册
PMCM4402UPEZ20 V, P-channel Trench MOSFETLow threshold voltage
Ultra small package 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥1.3916
100+:¥0.8763
300+:¥0.8763
- 27,000
- 数据手册
PMGD175XNEX30 V, Dual N-channel Trench MOSFETLow threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥2.6911
100+:¥1.3238
300+:¥1.3238
- 18,000
- 数据手册
NX1029X,11560 / 50 V, 330 / 170 mA N/P-channel Trench MOSFETLogic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)
1+:¥2.4086
100+:¥1.4594
300+:¥1.4594
- 16,000
- 数据手册
PMXB40UNEZ12 V, N-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 34 mΩ
Very low threshold voltage of 0.65 V for portable applications
1+:¥2.2391
100+:¥1.0232
300+:¥1.0232
- 15,000
- 数据手册
PMX300UNEZ30 V, N-channel Trench MOSFETLow threshold voltage
Leadless ultra small package 0.63mm x 0.33 mm x 0.25 mm
Trench MOSFET technology
Low profile (0.25 mm)
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥1.4803
100+:¥0.9436
300+:¥0.9436
- 15,000
- 数据手册
PMX100UNEZ20 V, N-channel Trench MOSFETLow threshold voltage
Trench MOSFET technology
Low profile (0.25 mm)
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥1.4803
100+:¥0.9436
300+:¥0.9436
- 15,000
- 数据手册
PMDXB600UNEZ20 V, dual N-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
1+:¥2.3295
100+:¥0.9656
300+:¥0.9656
- 15,000
- 数据手册
PMPB07R3ENAX30 V, N-channel Trench MOSFETLogic-level compatible
Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Exposed drain pad for excellent thermal conduction
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
1+:¥3.5951
100+:¥2.6572
300+:¥2.0696
- 12,000
- 数据手册
PMDPB30XN,115channel Trench MOSFETVery fast switching
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
1+:¥3.3465
100+:¥1.6628
300+:¥1.6628
- 12,000
- 数据手册
BSH201,215P-channel vertical D-MOS logic level FETSaves PCB space due to small footprint
Suitable for high frequency applications due to fast switching characteristics
Suitable for logic level gate drive sources
Suitable for low gate drive sources
1+:¥2.5668
100+:¥1.2786
300+:¥1.2786
- 12,000
- 数据手册
PMZB950UPEYL20 V, P-channel Trench MOSFETTrench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
1+:¥2.7007
100+:¥1.0170
300+:¥1.0170
- 10,000
- 数据手册
PMZB950UPELYL20 V, P-channel Trench MOSFETLow leakage current
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
1+:¥2.1583
100+:¥0.9684
300+:¥0.9684
- 10,000
- 数据手册