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- 商品编号:GAN063-650WSAQ
- 简述:650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
- 描述:
The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
- 数据手册:
- 数量：
- 单价:¥112.4582
- 总价:¥0.0000
- 数量单价总价
- 1¥112.4582¥112.4582
- 100¥105.8753¥10,587.5300
- 300¥95.9213¥28,776.3900
特性
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability (800 V)
目标应用
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
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