图像仅供参考
请参阅产品规格
- 商品编号:NGW50T60M3DFQ
- 简述:600 V, 50 A trench field-stop IGBT with full rated silicon diode
- 描述:
The NGW50T60M3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T60M3DF is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 600 V, 50 A IGBT is optimized for high-voltage, low-frequency industrial power inverter and servo motor drive applications.
- 数据手册:
- 数量：
- 单价:¥0.0000
- 总价:¥0.0000
特性
Collector current (IC) rated at 50 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature of 175 °C
Fully rated as a soft fast reverse recovery diode
5 μs short circuit withstand time
RoHS compliant, lead-free plating
目标应用
Motor drives for industrial and consumer appliances
- Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.
Power inverters
Uninterruptible Power Supply (UPS) inverter
Photovoltaic (PV) strings
EV charging
Induction heating
Welding
- 新品
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package¥96.6373 - 新品
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET¥112.4582 - 新品
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥48.3278 - 新品
GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥26.0632 - 新品
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥21.1907 - 新品
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package¥21.0514 - 新品
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode¥21.0331 - 新品
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P¥16.5854