Bidirectional ESD protection of one line
Extremely low diode capacitance Cd = 0.25 pF
Minimized capacitance variation over voltage
ESD protection up to ±10 kV according to IEC 61000-4-2
Ultra small SMD package
1+:¥2.1877
100+:¥1.0342
300+:¥1.0342
Bidirectional ESD protection of one line
Extremely low diode capacitance Cd = 0.2 pF
ESD protection up to ±20 kV according to IEC 61000-4-2
Ultra small SMD package
1+:¥1.6706
100+:¥0.8452
300+:¥0.8452
Bidirectional ESD protection of one line
Very low diode capacitance: Cd = 11 pF
Max. peak pulse power: PPPM = 45 W
Low clamping voltage: VCL = 12.5 V
Ultra low leakage current: IRM < 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPPM = 4.8 A
1+:¥1.9207
100+:¥0.8139
300+:¥0.8139
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)
Bidirectional ESD protection of one line
Low diode capacitance Cd = 12 pF
ESD protection up to ±30 kV according to IEC 61000-4-2
Ultra small SMD package
Symmetrical breakdown voltage
1+:¥1.3042
100+:¥0.5633
300+:¥0.5633
Bidirectional ESD protection of one line
Extremely low diode capacitance Cd = 0.25 pF
ESD protection up to ±15 kV according to IEC 61000-4-2
Ultra small SMD package
1+:¥0.3769
100+:¥0.2792
300+:¥0.2792
Bidirectional ESD protection of one line
Very low diode capacitance: Cd = 11 pF
Max. peak pulse power: PPPM = 45 W
Low clamping voltage: VCL = 12.5 V
Ultra low leakage current: IRM = 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPPM = 4.8 A
1+:¥1.9244
100+:¥0.7933
300+:¥0.7933
Unidirectional ESD protection of two lines
Bidirectional ESD protection of one line
Low diode capacitance: Cd ≤ 60 pF
Rated peak pulse power: PPPM ≤ 40 W
Ultra low leakage current: IRM ≤ 5 nA
ESD protection up to 30 kV (contact discharge)
IEC 61000-4-2; level 4 (ESD)
IEC 61643-321
1+:¥1.5612
100+:¥0.6156
300+:¥0.6156
Bidirectional ESD protection of two lines
Very low diode capacitance Cd = 0.21 pF
Extremely low clamping to protect sensitive I/Os
Extremely low-inductance protection path to ground
Extremely symmetrical layout
ESD protection up to ±20 kV according to IEC 61000-4-2; surge robustness 8.5 A 8/20 μs
Ultra small SMD package
Placed on one differential line pair, almost no extra PCB space demand for protection
1+:¥1.6706
100+:¥0.8452
300+:¥0.8452
Bidirectional ESD protection of two lines
Very low diode capacitance Cd = 0.26 pF
Extremely low clamping to protect sensitive I/Os
Extremely low-inductance protection path to ground
Extremely symmetrical layout
ESD protection up to ±20 kV according to IEC 61000-4-2
Ultra small SMD package
Placed on one differential line pair, almost no extra PCB space demand for protection
1+:¥1.4618
100+:¥0.6733
300+:¥0.6733
System-level ESD protection for USB 2.0 and USB 3.2 combination, SD-memory card and thunderbolt interfaces
Supports SuperSpeed USB 3.2 at 10 Gbps
All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of ±15 kV exceeding IEC 61000-4-2, level 4
Matched 0.5 mm trace spacing
Line capacitance of only 0.35 pF for each channel
Design-friendly ‘pass-through’ signal routing
1+:¥2.2986
100+:¥1.5030
300+:¥1.2445
Bidirectional ESD protection of one line
ESD protection up to 9 kV
Ultra low diode capacitance: Cd = 0.9 pF
Very low leakage current: IRM = 1 nA
1+:¥2.9733
100+:¥1.9490
300+:¥1.5413
Bidirectional ESD protection of one line
Extremely low capacitance: Cd = 0.85 pF
Low clamping voltage: VCL = 17 V
Ultra low leakage current: IRM = 1 nA
ESD protection up to 15 kV
IEC 61000-4-2; level 4 (ESD)
1+:¥1.7800
100+:¥0.8730
300+:¥0.8730
Bidirectional ESD protection of one line
Ultra small SMD plastic package
Solderable side pads
Package height typ. 0.37 mm
Low clamping voltage: VCL = 14 V
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 12 A
Max. peak pulse power: PPPM = 130W
Ultra low leakage current: IRM = 5 nA
1+:¥1.8794
100+:¥0.9169
300+:¥0.9169
Bidirectional ESD protection of one line
Max. peak pulse power: PPPM = 130 W
Low clamping voltage: V(CL)R = 14 V
Ultra low leakage current: IRM = 5 nA
ESD protection up to 30 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); IPPM = 12 A
Ultra small SMD plastic packages
1+:¥2.5120
100+:¥0.9945
300+:¥0.9945
ESD protection of up to two lines
Low diode capacitance Cd = 16 pF
Low clamping voltage VCL = 10 V
Ultra low leakage current IRM = 5 nA
ESD protection up to 15 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPPM = 2.5 A
AEC-Q101 qualified
1+:¥1.7104
100+:¥0.7448
300+:¥0.7448
Bidirectional ESD protection of one line
Femtofarad capacitance: Cd = 400 fF
Low ESD clamping voltage: 30 V at 30 ns and ± 8 kV
Very low leakage current: IRM < 1 nA
ESD protection up to 10 kV
IEC 61000-4-2; level 4 (ESD)
1+:¥2.1081
100+:¥1.3027
300+:¥1.1734
Ultra small SMD plastic package
ESD protection of one line
Max. peak pulse power: PPPM = 150 W
Low clamping voltage: VCL = 20 V
Ultra low leakage current: IRM < 700 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5; (surge); IPPM = 15 A
AEC-Q101 qualified
1+:¥1.2927
100+:¥0.6304
300+:¥0.6304
Ultra low diode capacitance Cd = 0.30 pF
High reverse standoff voltage VRWM = 24 V
Ultra low leakage current: IRM = 1 nA
ESD protection up to 10 kV; IEC 61000-4-2
1+:¥1.4220
100+:¥0.7090
300+:¥0.7090
Ultra low diode capacitance Cd = 0.35 pF
High reverse standoff voltage VRWM = 18 V
Very small voltage dependency of the capacitance
ESD protection up to ±10 kV according to IEC 61000-4-2, level 4
1+:¥1.9987
100+:¥0.8452
300+:¥0.8452
Bidirectional ESD protection of one line
Ultra small SMD plastic package
Solderable side pads
Package height typ. 0.37 mm
Very low diode capacitance: Cd = 11 pF
Max. peak pulse power: PPPM = 45 W
Low clamping voltage: VCL = 12.5 V
Ultra low leakage current: IRM = 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPPM = 4.8 A
1+:¥2.0286
100+:¥0.9089
300+:¥0.9089