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    GAN190-650FBEZ
    GAN190

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    请参阅产品规格

    • 商品编号:
      GAN190-650FBEZ
    • 简述:
      650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
    • 描述:

      The GAN190-650FBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance.

    • 数据手册:
    库存：2,490
    • 数量：
    • 单价:
      ¥21.0514
    • 总价:
      ¥0.0000
    价格（包含13%的增值税）
    数量单价总价
    1¥21.0514¥21.0514
    100¥20.2659¥2,026.5900
    300¥19.8283¥5,948.4900

    特性

    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Low package inductance and low package resistance

    目标应用

    • High power density and high efficiency power conversion

    • AC-to-DC converters, totem pole PFC

    • DC-to-DC converters

    • Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers

    • Datacom and telecom (AC-to-DC and DC-to-DC) converters

    • Motor drives

    • Solar (PV) inverters

    • Class D audio amplifiers, TV PSU and LED drivers

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