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    共 166件相关商品
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    vp_PESD2CANFD36VU
    PESD2CANFD36VU-QF
    Q - ESD protection for in-vehicle networks

    • Reverse stand-off voltage: VRWM = 36 V

    • Low clamping voltage: VCL= 45 V at IPP = 1 A

    • ESD protection up to 20 kV (IEC 61000-4-2)

    • Low capacitance: Cd = 6 pF

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.4295

    100+:¥1.0825

    300+:¥1.0825

    10,000
    数据手册
    74AUP1G74
    74AUP1G74GXX
    Low-power D-type flip-flop with set and reset; positive-edge trigger

    • Wide supply voltage range from 0.8 V to 3.6 V

    • CMOS low power dissipation

    • High noise immunity

    • Overvoltage tolerant inputs to 3.6 V

    • Low static power consumption; ICC = 0.9 μA (maximum)

    • Latch-up performance exceeds 100 mA per JESD 78 Class II

    • Low noise overshoot and undershoot < 10 % of VCC

    • IOFF circuitry provides partial Power-down mode operation

    • Complies with JEDEC standards:

      • JESD8-12 (0.8 V to 1.3 V)

      • JESD8-11 (0.9 V to 1.65 V)

      • JESD8-7 (1.2 V to 1.95 V)

      • JESD8-5 (1.8 V to 2.7 V)

      • JESD8C (2.7 V to 3.6 V)

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from -40 °C to +85 °C and -40 °C to +125 °C

    1+:¥2.8363

    100+:¥2.3052

    300+:¥2.0905

    10,000
    数据手册
    74AUP1G17
    74AUP1G17GX4Z
    Low-power Schmitt trigger

    • Wide supply voltage range from 0.8 V to 3.6 V

    • CMOS low power dissipation

    • High noise immunity

    • Overvoltage tolerant inputs to 3.6 V

    • Low noise overshoot and undershoot < 10 % of VCC

    • IOFF circuitry provides partial Power-down mode operation

    • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

    • Low static power consumption; ICC = 0.9 μA (maximum)

    • Complies with JEDEC standards:

      • JESD8-12 (0.8 V to 1.3 V)

      • JESD8-11 (0.9 V to 1.65 V)

      • JESD8-7 (1.2 V to 1.95 V)

      • JESD8-5 (1.8 V to 2.7 V)

      • JESD8C (2.7 V to 3.6 V)

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from -40 ° C to +85 ° C and -40 ° C to +125 ° C

    1+:¥2.2600

    100+:¥1.2656

    300+:¥1.2656

    10,000
    数据手册
    PNE200100CPE
    PNE200100CPEZ
    200 V, 2 x 5 A dual common cathode hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 5 A (per diode)

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥6.1811

    100+:¥4.8138

    300+:¥4.1584

    5,000
    数据手册
    PMEG100T100ELPE
    PMEG100T100ELPEZ
    100 V, 10 A low leakage current Trench Schottky barrier rectifier

    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Small and flat lead SMD power plastic package

    • AEC-Q101 qualified

    1+:¥5.1302

    100+:¥3.5595

    300+:¥2.9832

    5,000
    数据手册
    PMEG100T030ELPE
    PMEG100T030ELPEZ
    60 V, 3 A low leakage current Trench Schottky barrier rectifier

    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Small and flat lead SMD power plastic package

    • AEC-Q101 qualified

    1+:¥3.5030

    100+:¥2.4408

    300+:¥1.8984

    5,000
    数据手册
    PMEG060V030EPE
    PMEG060V030EPEZ
    60 V, 3 A low VF Schottky barrier rectifier

    • Very low forward voltage

    • High power capability due to clip-bonding technology

    • Small and thin SMD plastic package

    1+:¥3.3787

    100+:¥2.3504

    300+:¥1.8306

    5,000
    数据手册
    PMEG060T080CLPE
    PMEG060T080CLPEZ
    60 V, 2 x 4 A dual common cathode low leakage current Trench Schottky barrier rectifier

    • Reverse voltage: VR ≤ 60 V

    • Forward current: IF ≤ 4 A (per diode)

    • Low forward voltage

    • Low leakage current due to Trench Schottky technology

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    1+:¥5.0059

    100+:¥3.5369

    300+:¥2.9493

    5,000
    数据手册
    PMEG060T030ELPE
    PMEG060T030ELPE-QZ
    Q - 60 V, 3 A low leakage current Trench Schottky barrier rectifier

    • Average forward current: IF(AV) ≤ 3 A

    • Reverse voltage: VR ≤ 60 V

    • Low forward voltage

    • Low leakage current due to Trench Schottky technology

    • High power capability due to clip-bonding technology

    • Small and flat lead SMD power plastic package

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥3.7600

    100+:¥2.6151

    300+:¥2.6150

    5,000
    数据手册
    PMEG040V030EPE
    PMEG040V030EPEZ
    40 V, 3 A low VF Schottky barrier rectifier

    • Very low forward voltage

    • High power capability due to clip-bond technology

    • Small and thin SMD plastic package

    1+:¥3.3787

    100+:¥2.3504

    300+:¥1.8306

    5,000
    数据手册
    NXS0101
    NXS0101GMX
    Dual supply translating transceiver; open drain; auto direction sensing

    • Wide supply voltage range:

      • VCC(A): 1.65 V to 3.6 V and VCC(B): 2.3 V to 5.5 V

    • Maximum data rates:

      • Push-pull: 24 Mbps

    • IOFF circuitry provides partial Power-down mode operation

    • Inputs accept voltages up to 5.5 V

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2500 V for A port

      • HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V for B port

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1500 V

    • Latch-up performance exceeds 100 mA per JESD 78B Class II

    • Multiple package options

    • Specified from -40 °C to +85 °C and -40 °C to +125 °C

    1+:¥2.9493

    100+:¥2.2035

    300+:¥1.7289

    5,000
    数据手册
    74LVC2G74
    74LVC2G74GS,115
    Single D-type flip-flop with set and reset; positive edge trigger

    • Wide supply voltage range from 1.65 V to 5.5 V

    • Overvoltage tolerant inputs to 5.5 V

    • High noise immunity

    • Complies with JEDEC standard:

      • JESD8-7 (1.65 V to 1.95 V)

      • JESD8-5 (2.3 V to 2.7 V)

      • JESD8-B/JESD36 (2.7 V to 3.6 V)

    • ±24 mA output drive (VCC = 3.0 V)

    • CMOS low power consumption

    • Latch-up performance exceeds 250 mA

    • Direct interface with TTL levels

    • IOFF circuitry provides partial Power-down mode operation

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from -40 °C to +85 °C and -40 °C to +125 °C

    1+:¥2.4860

    100+:¥1.3899

    300+:¥1.3899

    5,000
    数据手册
    74LVC2G04
    74LVC2G04GS,132
    Dual inverter

    • Wide supply voltage range from 1.65 V to 5.5 V

    • Overvoltage tolerant inputs to 5.5 V

    • High noise immunity

    • ±24 mA output drive (VCC = 3.0 V)

    • CMOS low power dissipation

    • Direct interface with TTL levels

    • IOFF circuitry provides partial Power-down mode operation

    • Latch-up performance exceeds 250 mA

    • Complies with JEDEC standard:

      • JESD8-7 (1.65 V to 1.95 V)

      • JESD8-5 (2.3 V to 2.7 V)

      • JESD8C (2.7 V to 3.6 V)
      • JESD36 (4.6 V to 5.5 V)

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from −40 °C to +85 °C and −40 °C to +125 °C.

    1+:¥2.7120

    100+:¥1.5481

    300+:¥1.5481

    5,000
    数据手册
    74LVC1G32
    74LVC1G32GS,132
    Single 2-input OR gate

    • Wide supply voltage range from 1.65 V to 5.5 V

    • Overvoltage tolerant inputs to 5.5 V

    • High noise immunity

    • CMOS low power dissipation

    • IOFF circuitry provides partial Power-down mode operation

    • ±24 mA output drive (VCC = 3.0 V)

    • Latch-up performance exceeds 250 mA

    • Direct interface with TTL levels

    • Complies with JEDEC standard:

      • JESD8-7 (1.65 V to 1.95 V)

      • JESD8-5 (2.3 V to 2.7 V)

      • JESD8-B/JESD36 (2.7 V to 3.6 V)

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from -40 °C to +85 °C and -40 °C to +125 °C.

    1+:¥2.5877

    100+:¥1.2317

    300+:¥1.2317

    5,000
    数据手册
    74LVC1G08
    74LVC1G08GS,132
    Single 2-input AND gate

    • Wide supply voltage range from 1.65 V to 5.5 V

    • High noise immunity

    • ±24 mA output drive (VCC = 3.0 V)

    • CMOS low power dissipation

    • Direct interface with TTL levels

    • Overvoltage tolerant inputs to 5.5 V

    • IOFF circuitry provides partial Power-down mode operation

    • Latch-up performance ≤ 250 mA

    • Complies with JEDEC standard:

      • JESD8-7 (1.65 V to 1.95 V)

      • JESD8-5 (2.3 V to 2.7 V)

      • JESD8C (2.7 V to 3.6 V)

      • JESD36 (4.5 V to 5.5 V)

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from −40 °C to +85 °C and −40 °C to +125 °C

    1+:¥2.1357

    100+:¥1.1978

    300+:¥1.1978

    5,000
    数据手册
    74LVC1G04
    74LVC1G04GM,115
    Single inverter

    • Wide supply voltage range from 1.65 V to 5.5 V

    • Overvoltage tolerant inputs to 5.5 V

    • High noise immunity

    • CMOS low power dissipation

    • IOFF circuitry provides partial Power-down mode operation

    • ±24 mA output drive (VCC = 3.0 V)

    • Latch-up performance exceeds 250 mA

    • Direct interface with TTL levels

    • Complies with JEDEC standard:

      • JESD8-7 (1.65 V to 1.95 V)

      • JESD8-5 (2.3 V to 2.7 V)

      • JESD8C (2.7 V to 3.6 V)

      • JESD36 (4.5 V to 5.5 V)

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from -40 °C to +85 °C and -40 °C to +125 °C.

    1+:¥2.5086

    100+:¥1.2656

    300+:¥1.2656

    5,000
    数据手册
    74AUP3G14
    74AUP3G14GSX
    Low-power triple Schmitt trigger inverter

    • Wide supply voltage range from 0.8 V to 3.6 V

    • High noise immunity

    • Low static power consumption; ICC = 0.9 μA (maximum)

    • Latch-up performance exceeds 100 mA per JESD 78 Class II

    • Inputs accept voltages up to 3.6 V

    • Low noise overshoot and undershoot < 10 % of VCC

    • IOFF circuitry provides partial Power-down mode operation

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from -40 °C to +85 °C and -40 °C to +125 °C

    1+:¥3.5595

    100+:¥2.6555

    300+:¥2.1357

    5,000
    数据手册
    74AUP2G79
    74AUP2G79GS,115
    Low-power dual D-type flip-flop; positive-edge trigger

    • Wide supply voltage range from 0.8 V to 3.6 V

    • High noise immunity

    • Complies with JEDEC standards:

      • JESD8-12 (0.8 V to 1.3 V)

      • JESD8-11 (0.9 V to 1.65 V)

      • JESD8-7 (1.2 V to 1.95 V)

      • JESD8-5 (1.8 V to 2.7 V)

      • JESD8-B (2.7 V to 3.6 V)

    • Low static power consumption; ICC = 0.9 μA (maximum)

    • Latch-up performance exceeds 100 mA per JESD78 Class II

    • Inputs accept voltages up to 3.6 V

    • Low noise overshoot and undershoot < 10 % of VCC

    • IOFF circuitry provides partial Power-down mode operation

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from -40 °C to +85 °C and -40 °C to +125 °C

    1+:¥1.9399

    100+:¥1.7400

    300+:¥1.7400

    5,000
    数据手册
    74AUP1G125
    74AUP1G125GS-Q100H
    Q100 - Low-power buffer/line driver; 3-state

    • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

      • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

    • Wide supply voltage range from 0.8 V to 3.6 V

    • High noise immunity

    • Complies with JEDEC standards:

      • JESD8-12 (0.8 V to 1.3 V)

      • JESD8-11 (0.9 V to 1.65 V)

      • JESD8-7 (1.2 V to 1.95 V)

      • JESD8-5 (1.8 V to 2.7 V)

      • JESD8-B (2.7 V to 3.6 V)

    • Low static power consumption; ICC = 0.9 μA (maximum)

    • Latch-up performance exceeds 100 mA per JESD 78 Class II

    • Inputs accept voltages up to 3.6 V

    • Low noise overshoot and undershoot < 10 % of VCC

    • Input-disable feature allows floating input conditions

    • IOFF circuitry provides partial Power-down mode operation

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    1+:¥3.0736

    100+:¥1.7176

    300+:¥1.7176

    5,000
    数据手册
    74AUP1G06
    74AUP1G06GS,132
    Low-power inverter with open-drain output

    • Wide supply voltage range from 0.8 V to 3.6 V

    • High noise immunity

    • CMOS low power dissipation

    • Low static power consumption; ICC = 0.9 μA (maximum)

    • Latch-up performance exceeds 100 mA per JESD 78 Class II

    • Overvoltage tolerant inputs to 3.6 V

    • Low noise overshoot and undershoot < 10 % of VCC

    • IOFF circuitry provides partial Power-down mode operation

    • Complies with JEDEC standards:

      • JESD8-12 (0.8 V to 1.3 V)

      • JESD8-11 (0.9 V to 1.65 V)

      • JESD8-7 (1.65 V to 1.95 V)

      • JESD8-5 (2.3 V to 2.7 V)

      • JESD8C (2.7 V to 3.6 V)

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from −40 °C to +85 °C and −40 °C to +125 °C

    1+:¥2.7120

    100+:¥1.6724

    300+:¥1.6724

    5,000
    数据手册