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    共 354件相关商品
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    BCP56T Series
    BCP56-16TF
    80 V, 1 A NPN medium power transistors
    • High collector current capability IC and ICM
    • Three current gain selections
    • High power dissipation capability
    • AEC-Q101 qualified

    1+:¥0.7400

    100+:¥0.3600

    300+:¥0.3600

    303,980
    数据手册
    BC807L
    BC807-25LR
    45 V, 500 mA PNP general-purpose transistors

    • High current

    • Three current gain selections

    • AEC-Q101 qualified

    1+:¥0.1008

    100+:¥0.0636

    300+:¥0.0636

    30,000
    数据手册
    PMXB40UNE
    PMXB40UNEZ
    12 V, N-channel Trench MOSFET

    • Trench MOSFET technology

    • Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

    • Exposed drain pad for excellent thermal conduction

    • ElectroStatic Discharge (ESD) protection 1 kV

    • Very low Drain-Source on-state resistance RDSon = 34 mΩ

    • Very low threshold voltage of 0.65 V for portable applications

    1+:¥1.0154

    100+:¥0.4640

    300+:¥0.4640

    15,000
    数据手册
    SZMM5Z series
    SZMM5Z3V3T5GF
    Voltage regulator diodes

    • Non-repetitive peak reverse power disspation: ≤ 40 W

    • Total power dissipation: ≤ 300 mW

    • Tolerance series: ± 2 %

    • Wide working voltage range: nominal 2.4 V to 36 V

    • Low differential resistance

    • AEC-Q101 qualified

    1+:¥0.3665

    100+:¥0.1502

    300+:¥0.1502

    10,000
    数据手册
    PZUxBL series
    PZU8.2B2L,315
    Single Zener diodes

    • Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W

    • Low reverse current IR range

    • Total power dissipation: Ptot ≤ 250 mW

    • Small plastic package suitable for surface-mounted design

    • Tolerance series:

      B: approximately +-5 pct;

      B2: approximately +-2 pct

    • AEC-Q101 qualified

    • Wide working voltage range:

      nominal 2.4 V to 36 V (E24 range)

    1+:¥0.4879

    100+:¥0.1739

    300+:¥0.1739

    10,000
    数据手册
    PZUxBL series
    PZU7.5BL,315
    Single Zener diodes

    • Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W

    • Low reverse current IR range

    • Total power dissipation: Ptot ≤ 250 mW

    • Small plastic package suitable for surface-mounted design

    • Tolerance series:

      B: approximately +-5 pct;

      B2: approximately +-2 pct

    • AEC-Q101 qualified

    • Wide working voltage range:

      nominal 2.4 V to 36 V (E24 range)

    1+:¥0.4006

    100+:¥0.1536

    300+:¥0.1536

    10,000
    数据手册
    PZUxBL series
    PZU7.5B2L,315
    Single Zener diodes

    • Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W

    • Low reverse current IR range

    • Total power dissipation: Ptot ≤ 250 mW

    • Small plastic package suitable for surface-mounted design

    • Tolerance series:

      B: approximately +-5 pct;

      B2: approximately +-2 pct

    • AEC-Q101 qualified

    • Wide working voltage range:

      nominal 2.4 V to 36 V (E24 range)

    1+:¥0.4500

    100+:¥0.1741

    300+:¥0.1741

    10,000
    数据手册
    PZUxBL series
    PZU4.7B2L,315
    Single Zener diodes

    • Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W

    • Low reverse current IR range

    • Total power dissipation: Ptot ≤ 250 mW

    • Small plastic package suitable for surface-mounted design

    • Tolerance series:

      B: approximately +-5 pct;

      B2: approximately +-2 pct

    • AEC-Q101 qualified

    • Wide working voltage range:

      nominal 2.4 V to 36 V (E24 range)

    1+:¥0.4494

    100+:¥0.1739

    300+:¥0.1739

    10,000
    数据手册
    PZUxBL series
    PZU3.6BL,315
    Single Zener diodes

    • Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W

    • Low reverse current IR range

    • Total power dissipation: Ptot ≤ 250 mW

    • Small plastic package suitable for surface-mounted design

    • Tolerance series:

      B: approximately +-5 pct;

      B2: approximately +-2 pct

    • AEC-Q101 qualified

    • Wide working voltage range:

      nominal 2.4 V to 36 V (E24 range)

    1+:¥0.3772

    100+:¥0.1538

    300+:¥0.1538

    10,000
    数据手册
    PZUxBL series
    PZU3.0BL,315
    Single Zener diodes

    • Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W

    • Low reverse current IR range

    • Total power dissipation: Ptot ≤ 250 mW

    • Small plastic package suitable for surface-mounted design

    • Tolerance series:

      B: approximately +-5 pct;

      B2: approximately +-2 pct

    • AEC-Q101 qualified

    • Wide working voltage range:

      nominal 2.4 V to 36 V (E24 range)

    1+:¥0.3678

    100+:¥0.1538

    300+:¥0.1538

    10,000
    数据手册
    PZUxBL series
    PZU3.0B2L,315
    Single Zener diodes

    • Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W

    • Low reverse current IR range

    • Total power dissipation: Ptot ≤ 250 mW

    • Small plastic package suitable for surface-mounted design

    • Tolerance series:

      B: approximately +-5 pct;

      B2: approximately +-2 pct

    • AEC-Q101 qualified

    • Wide working voltage range:

      nominal 2.4 V to 36 V (E24 range)

    1+:¥0.4494

    100+:¥0.1739

    300+:¥0.1739

    10,000
    数据手册
    PZUxBL series
    PZU24BL,315
    Single Zener diodes

    • Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W

    • Low reverse current IR range

    • Total power dissipation: Ptot ≤ 250 mW

    • Small plastic package suitable for surface-mounted design

    • Tolerance series:

      B: approximately +-5 pct;

      B2: approximately +-2 pct

    • AEC-Q101 qualified

    • Wide working voltage range:

      nominal 2.4 V to 36 V (E24 range)

    1+:¥0.4006

    100+:¥0.1536

    300+:¥0.1536

    10,000
    数据手册
    PZUxBL series
    PZU20BL,315
    Single Zener diodes

    • Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W

    • Low reverse current IR range

    • Total power dissipation: Ptot ≤ 250 mW

    • Small plastic package suitable for surface-mounted design

    • Tolerance series:

      B: approximately +-5 pct;

      B2: approximately +-2 pct

    • AEC-Q101 qualified

    • Wide working voltage range:

      nominal 2.4 V to 36 V (E24 range)

    1+:¥0.3151

    100+:¥0.1538

    300+:¥0.1538

    10,000
    数据手册
    PTVS10VZ1USK
    PTVS10VZ1USKYL
    Transient voltage suppressor in DSN1608-2 for mobile applications

    • Rated peak pulse current: IPPM = 75 A (8/20 µs pulse)

    • Rated peak pulse power: PPPM = 2000 W (8/20 µs pulse)

    • Dynamic resistance Rdyn = 0.11 Ω

    • Reverse current: IRM = 0.1 nA typ.

    • Very low package height: 0.29 mm

    1+:¥0.8986

    100+:¥0.3712

    300+:¥0.3712

    10,000
    数据手册
    vp_PESD2CANFD36UU
    PESD2CANFD36UU-QF
    Q - ESD protection for in-vehicle networks

    • Reverse stand-off voltage: VRWM = 36 V

    • Low clamping voltage: VCL= 48 V at IPP = 1 A

    • ESD protection up to 15 kV (IEC 61000-4-2)

    • Low capacitance: Cd = 4.3 pF

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.5700

    100+:¥0.2500

    300+:¥0.2500

    10,000
    数据手册
    vp_PESD2CANFD36LU
    PESD2CANFD36LU-QF
    Q - ESD protection for in-vehicle networks

    • Reverse stand-off voltage: VRWM = 36 V

    • Low clamping voltage: VCL= 43 V at IPP = 1 A

    • ESD protection up to 22 kV (IEC 61000-4-2)

    • Low capacitance: Cd = 10 pF

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.6942

    100+:¥0.3093

    300+:¥0.3093

    10,000
    数据手册
    PDTC143EM
    PDTC143EM,315
    50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7  kΩ

    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.3893

    100+:¥0.1500

    300+:¥0.1500

    10,000
    数据手册
    PDTC124XMB
    PDTC124XMB,315
    NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

    • 100 mA output current capability

    • Reduces component count

    • Built-in bias resistors

    • Reduces pick and place costs

    • Simplifies circuit design

    • AEC-Q101 qualified

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    1+:¥0.4755

    100+:¥0.1818

    300+:¥0.1818

    10,000
    数据手册
    PDTC123JMB
    PDTC123JMB,315
    NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

    • 100 mA output current capability

    • Reduces component count

    • Built-in bias resistors

    • Reduces pick and place costs

    • Simplifies circuit design

    • AEC-Q101 qualified

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    1+:¥0.4755

    100+:¥0.1818

    300+:¥0.1818

    10,000
    数据手册
    PBSS2540MB
    PBSS2540MB,315
    40 V, 0.5 A NPN low VCEsat (BISS) transistor

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High efficiency due to less heat generation

    • AEC-Q101 qualified

    • Reduced Printed-Circuit Board (PCB) requirements

    1+:¥0.4627

    100+:¥0.2050

    300+:¥0.2050

    10,000
    数据手册