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    GAN7R0-150LBEZ
    GAN7R0

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    • 商品编号:
      GAN7R0-150LBEZ
    • 简述:
      150LBE - 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package
    • 描述:

      The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid Array (LGA) package. It is a normally-off e-mode device offering superior performance.

    • 数据手册:
    库存2,489
    • 数量
    • 单价:
      ¥19.7587
    • 总价:
      ¥0.0000
    价格(包含13%的增值税)
    数量单价总价
    1¥19.7587¥19.7587
    100¥18.9732¥1,897.3200
    300¥18.6152¥5,584.5600

    特性

    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Land Grid Array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm

    目标应用

    • High power density and high efficiency power conversion

    • AC-to-DC converters, (secondary stage)

    • High frequency DC-to-DC converters in 48 V systems
    • 400 V to 48 V LLC converters, secondary (rectification) side

    • Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers

    • Datacom and telecom (AC-to-DC and DC-to-DC) converters

    • Motor drives

    • LiDAR (non-automotive)

    • Class D audio amplifiers

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