- 产品
- 描述
- 价格
- 库存
- 数据手册
- 操作
PMP4201V,11545 V, 100 mA NPN/NPN matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥2.7024
100+:¥1.9905
300+:¥1.5385
- 12,000
- 数据手册
PMP5201V,11545 V, 100 mA PNP/PNP matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥2.8024
100+:¥2.0905
300+:¥1.6385
- 4,000
- 数据手册
BCM847BV,115NPN/NPN matched double transistorCurrent gain matching
Base-emitter voltage matching
Drop-in replacement for standard double transistors
1+:¥2.7120
100+:¥1.8532
300+:¥1.8532
- 4,000
- 数据手册
PMP5201Y,11545 V, 100 mA PNP/PNP matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥3.0623
100+:¥1.6385
300+:¥1.6385
- 3,000
- 数据手册
PBSM5240PFH,11540 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFETVery low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1+:¥2.8024
100+:¥2.0905
300+:¥1.6385
- 3,000
- 数据手册
PBLS6003D,11560 V, 1 A PNP loadswitch double transistorLow VCEsat transistor and resistor-equipped transistor in one package
Low threshold voltage (< 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
AEC-Q101 qualified
1+:¥2.7346
100+:¥1.1752
300+:¥1.1752
- 3,000
- 数据手册
PBLS4003Y,11540 V 500 mA PNP/NPN loadswitch double transistorLow VCEsat and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
1+:¥2.3052
100+:¥1.1526
300+:¥1.1526
- 3,000
- 数据手册
PBLS2021D,11520 V, 1.8 A PNP BISS loadswitchLow VCEsat (BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
1+:¥2.9154
100+:¥2.1809
300+:¥1.7176
- 3,000
- 数据手册
PZTA14,115NPN Darlington transistorHigh current (max. 500 mA)
Low voltage (max. 30 V)
AEC-Q101 qualified
¥0.0000
- 0
- 数据手册
PMP5501V,11545 V, 100 mA PNP/PNP matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
¥0.0000
- 0
- 数据手册
PMP4501V,11545 V, 100 mA NPN/NPN matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
¥0.0000
- 0
- 数据手册
PMP3906AYSH40 V, 200 mA PNP/PNP matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
¥0.0000
- 0
- 数据手册
PBSM5240PF,11540 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFETVery low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1+:¥2.7911
100+:¥1.9436
300+:¥1.5142
- 0
- 数据手册
PBLS6024D,11560 V, 1.5 A PNP loadswitchLow VCEsat and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
¥0.0000
- 0
- 数据手册
PBLS6023D,11560 V, 1.5 A PNP BISS loadswitchLow VCEsat (BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
¥0.0000
- 0
- 数据手册
PBLS6022D,11560 V, 1.5 A PNP BISS loadswitchLow VCEsat (BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
¥0.0000
- 0
- 数据手册
PBLS6021D,11560 V, 1.5 A PNP BISS loadswitchLow VCEsat (BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
¥0.0000
- 0
- 数据手册