Current gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥2.3781
100+:¥1.7516
300+:¥1.3539
Current gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥2.4661
100+:¥1.8396
300+:¥1.4419
Current gain matching
Base-emitter voltage matching
Drop-in replacement for standard double transistors
1+:¥2.3866
100+:¥1.6308
300+:¥1.6308
Current gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥2.6948
100+:¥1.4419
300+:¥1.4419
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1+:¥2.4661
100+:¥1.8396
300+:¥1.4419
Low VCEsat transistor and resistor-equipped transistor in one package
Low threshold voltage (< 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
AEC-Q101 qualified
1+:¥2.4064
100+:¥1.0342
300+:¥1.0342
Low VCEsat (BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
1+:¥2.5656
100+:¥1.9192
300+:¥1.5115
Low VCEsat and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
1+:¥2.0286
100+:¥1.0143
300+:¥1.0143
High current (max. 500 mA)
Low voltage (max. 30 V)
AEC-Q101 qualified
1+:¥2.3437
100+:¥1.5926
300+:¥1.5926
High current (max. 500 mA)
Low voltage (max. 30 V)
AEC-Q101 qualified
1+:¥2.2180
100+:¥1.3290
300+:¥1.2306
Current gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥1.8256
100+:¥1.0943
300+:¥1.0130
Current gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥2.4177
100+:¥1.4499
300+:¥1.3426
Current gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥1.8256
100+:¥1.0943
300+:¥1.0130
Current gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥2.2055
100+:¥1.3238
300+:¥1.2257
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1+:¥2.4562
100+:¥1.7104
300+:¥1.3325
Low VCEsat and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
1+:¥2.7962
100+:¥2.7962
300+:¥2.7962
Low VCEsat (BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
1+:¥2.3018
100+:¥1.5991
300+:¥1.2484