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- 商品编号:GAN080-650EBEZ
- 简述:650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
- 描述:
The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance.
- 数据手册:
- 数量：
- 单价:¥54.9180
- 总价:¥0.0000
- 数量单价总价
- 1¥54.9180¥54.9180
- 100¥52.8049¥5,280.4900
- 300¥51.7427¥15,522.8100
特性
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
ESD protection
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Low package inductance and low package resistance
目标应用
High power density and high efficiency power conversion
AC-to-DC converters, totem pole PFC
DC-to-DC converters
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
Solar (PV) inverters
Class D audio amplifiers, TV PSU and LED drivers
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