- 产品
- 描述
- 价格
- 库存
- 数据手册
- 操作
PSMN1R0-40SSHJ40SSH - N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology325 Amp continuous current capability
LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection
Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating
Ideal replacement for D2PAK and 10 x 12 mm leadless package types
Qualified to 175 °C
Meets UL2595 requirements for creepage and clearance
Avalanche rated, 100 % tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
1+:¥24.4080
100+:¥19.7750
300+:¥18.5546
- 12,346
- 数据手册
PXN4R7-30QLJ30QL - 30 V, N-channel Trench MOSFETLogic-level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
1+:¥4.2279
100+:¥2.8493
300+:¥2.3634
- 11,999
- 数据手册
PXN012-60QLJ60QL - N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33Logic level compatibility
Trench MOSFET technology
Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)
1+:¥2.9962
100+:¥2.2165
300+:¥1.7193
- 11,997
- 数据手册
PSMNR60-25YLHX25YLH - N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology100% avalanche tested at I(AS) = 190 A
Optimized for low RDSon
Low leakage < 1 μA at 25 °C
Low spiking and ringing for low EMI designs
Optimized for 4.5 V gate drive
Copper-clip for low parasitic inductance and resistance
High reliability LFPAK package, qualified to 175 °C
Wave solderable; exposed leads for optimal solder coverage and visual solder inspection
1+:¥16.5788
100+:¥12.1831
300+:¥11.0418
- 9,000
- 数据手册
PSMN7R0-60YS,11560YS - N-channel LFPAK 60 V 6.4 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥7.6405
100+:¥5.9568
300+:¥5.2110
- 9,000
- 数据手册
PSMN5R2-60YLX60YL - N-channel 60 V, 5.2 mΩ logic level MOSFET in LFPAK56Advanced TrenchMOS provides low RDSon and low gate charge
Logic level gate operation
Avalanche rated, 100% tested
LFPAK provides maximum power density in a Power SO8 package
1+:¥9.8214
100+:¥7.5840
300+:¥6.4201
- 9,000
- 数据手册
PSMN4R0-60YS,11560YS - N-channel LFPAK 60 V, 4.0 mΩ standard level FETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥11.5390
100+:¥8.7705
300+:¥7.6405
- 9,000
- 数据手册
PSMN1R8-40YLC,11540YLC - N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technologyHigh reliability Power SO8 package, qualified to 175°C
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
Ultra low Rdson and low parasitic inductance
1+:¥12.1831
100+:¥9.6632
300+:¥8.1942
- 9,000
- 数据手册
PSMN1R2-25YLDX25YLD - N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology100% Avalanche tested at I(AS) = 169 A
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
Wave solderable; exposed leads for optimal visual solder inspection
1+:¥10.2282
100+:¥7.9117
300+:¥6.9173
- 9,000
- 数据手册
PSMN1R2-25YLC,11525YLC - N-channel 25 V 1.3 mΩ logic level MOSFET in LFPAK using NextPower technologyHigh reliability Power SO8 package, qualified to 175°C
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD & QOSS for high system efficiencies at low and high loads
Ultra low Rdson and low parasitic inductance
1+:¥6.9964
100+:¥5.5500
300+:¥4.8833
- 9,000
- 数据手册
PSMN1R2-25YL,11525YL - N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAKAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥16.9856
100+:¥13.2453
300+:¥11.5390
- 9,000
- 数据手册
PSMN026-80YS,11580YS - N-channel LFPAK 80 V 27.5 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥4.2618
100+:¥3.0753
300+:¥2.7250
- 9,000
- 数据手册
PSMN020-100YS,115100YS - N-channel 100V 20.5mΩ standard level MOSFET in LFPAKAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥7.1433
100+:¥5.5387
300+:¥4.6799
- 9,000
- 数据手册
PSMN014-40YS,11540YS - N-channel LFPAK 40 V, 14 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥3.7759
100+:¥2.8154
300+:¥2.4199
- 9,000
- 数据手册
PSMN7R0-30YL,11530YL - N-channel 30 V 7 mΩ logic level MOSFET in LFPAKHigh efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
1+:¥4.8833
100+:¥3.2561
300+:¥2.7024
- 8,996
- 数据手册
PSMN4R5-40PS,12740PS - N-channel 40 V 4.6 mΩ standard level MOSFETHigh efficiency due to low switching and conduction losses
Robust construction for demanding applications
Standard level gate
1+:¥10.3977
100+:¥8.8496
300+:¥7.9569
- 6,000
- 数据手册
PSMN102-200Y,115channel TrenchMOS SiliconMAX standard level FETHigher operating power due to low thermal resistance
Suitable for high frequency applications due to fast switching characteristics
1+:¥7.7874
100+:¥6.0359
300+:¥5.0980
- 6,000
- 数据手册
PSMN069-100YS,115100YS - N-channel LFPAK 100 V 72.4 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥4.1601
100+:¥3.0527
300+:¥2.5329
- 6,000
- 数据手册
PSMN040-100MSEX100MSE - N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applicationsEnhanced forward biased safe operating area for superior linear mode operation
Low Rdson for low conduction losses
Ultra reliable LFPAK33 package for superior thermal and ruggedness performance
Very low IDSS
1+:¥6.0924
100+:¥4.7138
300+:¥3.9793
- 6,000
- 数据手册
PSMN030-60YS,11560YS - N-channel LFPAK 60 V 24.7 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥5.9003
100+:¥4.0471
300+:¥3.3691
- 6,000
- 数据手册