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PXN4R7-30QLJ30QL - 30 V, N-channel Trench MOSFETLogic-level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
1+:¥3.7206
100+:¥2.5074
300+:¥2.0798
- 11,999
- 数据手册
PSMNR60-25YLHX25YLH - N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology100% avalanche tested at I(AS) = 190 A
Optimized for low RDSon
Low leakage < 1 μA at 25 °C
Low spiking and ringing for low EMI designs
Optimized for 4.5 V gate drive
Copper-clip for low parasitic inductance and resistance
High reliability LFPAK package, qualified to 175 °C
Wave solderable; exposed leads for optimal solder coverage and visual solder inspection
1+:¥14.5893
100+:¥10.7211
300+:¥9.7168
- 9,000
- 数据手册
PSMN7R0-60YS,11560YS - N-channel LFPAK 60 V, 6.4 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥6.7236
100+:¥5.2420
300+:¥4.5857
- 9,000
- 数据手册
PSMN5R2-60YLX60YL - N-channel 60 V, 5.2 mΩ logic level MOSFET in LFPAK56Advanced TrenchMOS provides low RDSon and low gate charge
Logic level gate operation
Avalanche rated, 100% tested
LFPAK provides maximum power density in a Power SO8 package
1+:¥8.6428
100+:¥6.6739
300+:¥5.6497
- 9,000
- 数据手册
PSMN4R0-60YS,11560YS - N-channel LFPAK 60 V, 4.0 mΩ standard level FETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥10.1543
100+:¥7.7180
300+:¥6.7236
- 9,000
- 数据手册
PSMN1R2-25YLDX25YLD - N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology100% Avalanche tested at I(AS) = 169 A
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
Wave solderable; exposed leads for optimal visual solder inspection
1+:¥9.0008
100+:¥6.9623
300+:¥6.0872
- 9,000
- 数据手册
PSMN1R2-25YLC,11525YLC - N-channel 25 V 1.3 mΩ logic level MOSFET in LFPAK using NextPower technologyHigh reliability Power SO8 package, qualified to 175°C
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD & QOSS for high system efficiencies at low and high loads
Ultra low Rdson and low parasitic inductance
1+:¥6.1568
100+:¥4.8840
300+:¥4.2973
- 9,000
- 数据手册
PSMN1R2-25YL,11525YL - N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAKAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥14.9473
100+:¥11.6559
300+:¥10.1543
- 9,000
- 数据手册
PSMN026-80YS,11580YS - N-channel LFPAK 80 V 27.5 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥3.7504
100+:¥2.7063
300+:¥2.3980
- 9,000
- 数据手册
PSMN020-100YS,115100YS - N-channel 100V 20.5mΩ standard level MOSFET in LFPAKAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥6.2861
100+:¥4.8741
300+:¥4.1183
- 9,000
- 数据手册
PSMN014-40YS,11540YS - N-channel LFPAK 40 V, 14 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥3.3228
100+:¥2.4776
300+:¥2.1295
- 9,000
- 数据手册
PSMN7R0-30YL,11530YL - N-channel 30 V 7 mΩ logic level MOSFET in LFPAKHigh efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
1+:¥4.2973
100+:¥2.8654
300+:¥2.3781
- 8,996
- 数据手册
PSMN1R8-40YLC,11540YLC - N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technologyHigh reliability Power SO8 package, qualified to 175°C
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
Ultra low Rdson and low parasitic inductance
1+:¥10.7211
100+:¥8.5036
300+:¥7.2109
- 8,760
- 数据手册
PSMN4R5-40PS,12740PS - N-channel 40 V 4.6 mΩ standard level MOSFETHigh efficiency due to low switching and conduction losses
Robust construction for demanding applications
Standard level gate
1+:¥9.1500
100+:¥7.7876
300+:¥7.0020
- 6,000
- 数据手册
PSMN102-200Y,115channel TrenchMOS SiliconMAX standard level FETHigher operating power due to low thermal resistance
Suitable for high frequency applications due to fast switching characteristics
1+:¥6.8529
100+:¥5.3116
300+:¥4.4862
- 6,000
- 数据手册
PSMN069-100YS,115100YS - N-channel LFPAK 100 V 72.4 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥3.6609
100+:¥2.6864
300+:¥2.2290
- 6,000
- 数据手册
PSMN040-100MSEX100MSE - N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applicationsEnhanced forward biased safe operating area for superior linear mode operation
Low Rdson for low conduction losses
Ultra reliable LFPAK33 package for superior thermal and ruggedness performance
Very low IDSS
1+:¥5.3613
100+:¥4.1481
300+:¥3.5018
- 6,000
- 数据手册
PSMN030-60YS,11560YS - N-channel LFPAK 60 V 24.7 mΩ standard level MOSFETAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1+:¥5.1923
100+:¥3.5614
300+:¥2.9648
- 6,000
- 数据手册
PSMN027-100PS,127100PS - N-channel 100V 26.8 mΩ standard level MOSFET in TO220.High efficiency due to low switching and conduction losses
Suitable for standard level gate drive
1+:¥8.2152
100+:¥7.0717
300+:¥6.2762
- 6,000
- 数据手册
PSMN4R2-60PLQ60PL - N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78High efficiency due to low switching & conduction losses
Robust construction for demanding applications
Logic level gate
1+:¥15.8821
100+:¥12.8690
300+:¥12.0835
- 5,000
- 数据手册