Default welcome nexperia!
产品搜索
    购物车
    NGW75T60H3DFQ
    NGW75T60H3DF

    图像仅供参考

    请参阅产品规格

    • 商品编号:
      NGW75T60H3DFQ
    • 简述:
      IGBT with trench construction, fast recovery diode
    • 描述:

      The NGW75T60H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠-⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T60H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard⁠-⁠switching 600 V, 75 A IGBT is optimized for high⁠-⁠voltage, high⁠-⁠frequency industrial power inverter applications.

    • 数据手册:
    库存0
    • 数量
    • 单价:
      ¥0.0000
    • 总价:
      ¥0.0000

    特性

    • Collector current (IC) rated at 75 A

    • Low conduction and switching losses

    • Stable and tight parameters for easy parallel operation

    • Maximum junction temperature of 175 °C

    • Fully rated as a soft fast reverse recovery diode

    • RoHS compliant, lead-free plating

    目标应用

    • Power inverters

      • Uninterruptible Power Supply (UPS) inverter

      • Photovoltaic (PV) strings

      • EV charging

    • Induction heating

    • Welding

    暂无数据
    数据手册