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NGW75T60H3DFQIGBT with trench construction, fast recovery diodeCollector current (IC) rated at 75 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature of 175 °C
Fully rated as a soft fast reverse recovery diode
RoHS compliant, lead-free plating
¥0.0000
- 0
- 数据手册
NGW50T60M3DFQ600 V, 50 A trench field-stop IGBT with full rated silicon diodeCollector current (IC) rated at 50 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature of 175 °C
Fully rated as a soft fast reverse recovery diode
5 μs short circuit withstand time
RoHS compliant, lead-free plating
¥0.0000
- 0
- 数据手册
NGW40T60H3DFQIGBT with trench construction, fast recovery diodeCollector current (IC) rated at 40 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature of 175 °C
Fully rated as a soft fast reverse recovery diode
RoHS compliant, lead-free plating
¥0.0000
- 0
- 数据手册
NGW30T60M3DFQ600 V, 30 A, carrier-stored Trench FS3 SC Robust IGBTCollector current (IC) rated at 30 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature of 175 °C
Fully rated as a soft fast reverse recovery diode
5 μs short circuit withstand time
RoHS compliant, lead-free plating
1+:¥23.9012
100+:¥20.3982
300+:¥19.2682
- 0
- 数据手册
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