在线客服
我的收藏
|免费注册
English
Default welcome nexperia!
产品搜索
    购物车
    GAN039-650NTBZ
    GAN039

    图像仅供参考

    请参阅产品规格

    • 商品编号:
      GAN039-650NTBZ
    • 简述:
      650NTB - 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
    • 描述:

      The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

    • 数据手册:
    库存：0
    • 数量：
    • 单价:
      ¥0.0000
    • 总价:
      ¥0.0000

    特性

    • Simplified driver design as standard level MOSFET gate drivers can be used:

      • 0 V to 12 V drive voltage

      • Gate threshold voltage VGSth of 4 V

    • Robust gate oxide with ±20 V VGS rating

    • High gate threshold voltage of 4 V for gate bounce immunity

    • Low body diode Vf for reduced losses and simplified dead-time adjustments

    • Transient over-voltage capability for increased robustness

    • CCPAK package technology:

      • Improved reliability, with reduced Rth(j-mb) for optimal cooling

      • Lower inductances for lower switching losses and EMI

      • 150 °C maximum junction temperature

      • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

      • Visual (AOI) soldering inspection, no need for expensive x-ray equipment

      • Easy solder wetting for good mechanical solder joints

    目标应用

    • Hard and soft switching converters for industrial and datacom power

    • Bridgeless totempole PFC

    • PV and UPS inverters

    • Servo motor drives

    暂无数据
    数据手册
    下载数据手册
    推荐产品