GAN039-650NTBZ

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GAN039-650NTBZ

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商品编号:
GAN039-650NTBZ
简述:
650NTB - 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
描述:
The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
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价格（包含13%的增值税）

Simplified driver design as standard level MOSFET gate drivers can be used:
- 0 V to 12 V drive voltage
- Gate threshold voltage V_GSth of 4 V
Robust gate oxide with ±20 V V_GS rating
High gate threshold voltage of 4 V for gate bounce immunity
Low body diode V_f for reduced losses and simplified dead-time adjustments
Transient over-voltage capability for increased robustness
CCPAK package technology:
- Improved reliability, with reduced R_th(j-mb) for optimal cooling
- Lower inductances for lower switching losses and EMI
- 150 °C maximum junction temperature
- High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
- Visual (AOI) soldering inspection, no need for expensive x-ray equipment
- Easy solder wetting for good mechanical solder joints