碳化硅(SiC)肖特基二极管

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650 V, 10 A SiC Schottky diode in TO-220-2 R2P

Zero forward and reverse recovery
Temperature independent fast and smooth switching performance
Outstanding figure-of-merit (Q_c x V_F)
High I_FSM capability
High power density
Reduced system costs
System miniaturization
Reduced EMI

1+:¥21.9463

100+:¥16.7370

300+:¥15.7652

1,997

650 V, 10 A SiC Schottky diode in DPAK R2P

Zero forward and reverse recovery
Temperature independent fast and smooth switching performance
Outstanding figure-of-merit (Q_c x V_F)
High I_FSM capability
High power density
Reduced system cost
System miniaturization
Reduced EMI

¥0.0000

0