SiC MOSFETs

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1200 V, 40 mΩ, N-channel SiC MOSFET

1+:¥115.7734

100+:¥104.6340

300+:¥94.4720

385

1200 V, 80 mOhm, N-channel SiC MOSFET

1+:¥83.8484

100+:¥77.0073

300+:¥70.2387

0

1200 V, 80 mΩ, N-channel SiC MOSFET

Excellent R_DSon temperature stability
Very low switching losses
Fast reverse recovery
Fast switching speed
Temperature independent turn-off switching losses
Very fast and robust intrinsic body diode

1+:¥87.5676

100+:¥74.4012

300+:¥74.4012

0

1200 V, 40 mΩ, N-channel SiC MOSFET

Excellent R_DSon temperature stability
Very low switching losses
Fast reverse recovery
Fast switching speed
Temperature independent turn-off switching losses
Very fast and robust intrinsic body diode

1+:¥133.6905

100+:¥113.6288

300+:¥113.6288

0