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    共 20件相关商品
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    PNE20080EPE
    PNE20080EPEZ
    200 V, 8 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 8 A

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥4.3166

    100+:¥2.9832

    300+:¥2.4973

    5,000
    数据手册
    PNE20060EPE
    PNE20060EPEZ
    200 V, 6 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 6 A

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥4.2940

    100+:¥2.9945

    300+:¥2.3391

    5,000
    数据手册
    PNE20060CPE
    PNE20060CPEZ
    200 V, 2 x 3 A dual common cathode hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 3 A (per diode)

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥5.0963

    100+:¥3.6725

    300+:¥3.0849

    5,000
    数据手册
    PNE20040CPE
    PNE20040CPEZ
    200 V, 2 x 2 A dual common cathode hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 2 A (per diode)

    • Switching time: trr ≤ 25 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥3.5934

    100+:¥2.6329

    300+:¥2.1357

    5,000
    数据手册
    PNE200100CPE
    PNE200100CPEZ
    200 V, 2 x 5 A dual common cathode hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 5 A (per diode)

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥6.1811

    100+:¥4.8138

    300+:¥4.1584

    5,000
    数据手册
    PNE200100EPE
    PNE200100EPEZ
    200 V, 10 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 10 A

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥4.9607

    100+:¥3.4352

    300+:¥2.8702

    4,990
    数据手册

    新品

    PNU65020EP
    PNU65020EPX
    650 V, 2 A ultrafast recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 2 A

    • Typical switching time trr of 35 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥2.9154

    100+:¥2.0340

    300+:¥1.5820

    3,000
    数据手册

    新品

    PNU65010ER
    PNU65010ERX
    650 V, 1 A ultrafast  recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 1 A

    • Typical switching time trr of 35 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥2.6442

    100+:¥1.5820

    300+:¥1.4690

    3,000
    数据手册

    新品

    PNU65010EP
    PNU65010EPX
    650 V, 1 A ultrafast recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 1 A

    • Typical switching time trr of 35 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥2.8363

    100+:¥1.6950

    300+:¥1.5820

    3,000
    数据手册
    PNE20030EP
    PNE20030EPX
    200 V, 3 A hyperfast  recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 3 A

    • Switching time trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Small and flat lead SMD plastic package

    • Package height typ. 1 mm

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    • AEC-Q101 qualified

    1+:¥2.9041

    100+:¥1.9888

    300+:¥1.5820

    3,000
    数据手册
    PNE20020ER
    PNE20020ERX
    200 V, 2 A hyperfast recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 2 A

    • Switching time trr ≤ 25 ns

    • Pt doped lifetime control

    • Low inductance

    • Small and flat lead SMD plastic package

    • Package height typ. 1 mm

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    • AEC-Q101 qualified

    1+:¥2.1922

    100+:¥1.4125

    300+:¥1.2882

    3,000
    数据手册
    PNE20020EP
    PNE20020EPX
    200 V, 2 A hyperfast recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 2 A

    • Switching time trr ≤ 25 ns

    • Pt doped lifetime control

    • Low inductance

    • Small and flat lead SMD plastic package

    • Package height typ. 1 mm

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    • AEC-Q qualified

    1+:¥2.4747

    100+:¥1.6159

    300+:¥1.4577

    3,000
    数据手册
    PNE20020AER
    PNE20020AERX
    200 V, 2 A hyperfast recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 2 A

    • Switching time trr ≤ 25 ns

    • Low forward voltage

    • Pt doped lifetime control

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    1+:¥2.5990

    100+:¥1.5594

    300+:¥1.4351

    3,000
    数据手册
    PNE20010ER
    PNE20010ERX
    200 V, 1 A hyperfast recovery rectifier

    • Reverse voltage VR ≤ 200 V

    • Forward current IF ≤ 1 A

    • Hyperfast recovery time trr ≤ 25 ns

    • Pt doped lifetime control

    • Low inductance

    • Small and flat lead SMD plastic package

    • Package height typ. 1 mm

    • High power capability due to clip-bond technology

    • Planar die design

    • Capable for reflow and wave soldering

    • AEC-Q101 qualified

    1+:¥1.8758

    100+:¥1.5481

    300+:¥1.2543

    3,000
    数据手册

    新品

    PNU65030EP
    PNU65030EPX
    650 V, 3 A ultrafast recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 3 A

    • Typical switching time trr of 41 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥3.5030

    100+:¥2.4408

    300+:¥1.8984

    2,996
    数据手册
    PNE20080CPE
    PNE20080CPEZ
    200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 4 A (per diode)

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥5.6274

    100+:¥4.4635

    300+:¥3.7855

    0
    数据手册
    PNE20050EP
    PNE20050EPX
    200 V, 5 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 5 A

    • Switching time: trr ≤ 30 ns

    • Planar die design

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    1+:¥4.5899

    100+:¥3.2832

    300+:¥2.7362

    0
    数据手册
    PNE20040EP
    PNE20040EPX
    200 V, 4 A hyperfast switching recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 4 A

    • Switching time: trr ≤ 30 ns

    • Planar die design

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    1+:¥3.2092

    100+:¥2.2261

    300+:¥1.7402

    0
    数据手册
    PNE20040EPE
    PNE20040EPEZ
    200 V, 4 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 4 A

    • Switching time: trr ≤ 30 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • Package height typical 0.95 mm

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥3.9437

    100+:¥2.7459

    300+:¥2.1470

    0
    数据手册

    新品

    PNE20010EXD
    PNE20010EXDX
    200 V, 1 A hyperfast recovery rectifier

    • Reverse voltage: VR ≤ 200 V

    • Forward current: IF ≤ 1 A

    • Hyperfast recovery time: trr ≤ 25 ns

    • Planar die design with Pt doped life time control

    • Low inductance

    • Small and flat lead SMD plastic package, typical height 0.68 mm

    • High power capability due to clip-bond technology

    1+:¥2.7346

    100+:¥1.3786

    300+:¥1.3786

    0
    数据手册