Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm
1+:¥1.9001
100+:¥1.0300
300+:¥1.0300
Very fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Ultra thin package profile of 0.37 mm
1+:¥1.9001
100+:¥0.9091
300+:¥0.9091
Low threshold voltage
Ultra small package 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥1.3916
100+:¥0.8763
300+:¥0.8763
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥2.6911
100+:¥1.3238
300+:¥1.3238
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)
1+:¥2.4086
100+:¥1.4594
300+:¥1.4594
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 34 mΩ
Very low threshold voltage of 0.65 V for portable applications
1+:¥2.2391
100+:¥1.0232
300+:¥1.0232
Low threshold voltage
Leadless ultra small package 0.63mm x 0.33 mm x 0.25 mm
Trench MOSFET technology
Low profile (0.25 mm)
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥1.4803
100+:¥0.9436
300+:¥0.9436
Low threshold voltage
Trench MOSFET technology
Low profile (0.25 mm)
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1+:¥1.4803
100+:¥0.9436
300+:¥0.9436
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
1+:¥2.3295
100+:¥0.9656
300+:¥0.9656
325 Amp continuous current capability
LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection
Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating
Ideal replacement for D2PAK and 10 x 12 mm leadless package types
Qualified to 175 °C
Meets UL2595 requirements for creepage and clearance
Avalanche rated, 100 % tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
1+:¥24.4080
100+:¥19.7750
300+:¥18.5546
Logic-level compatible
Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
Exposed drain pad for excellent thermal conduction
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
1+:¥3.5951
100+:¥2.6572
300+:¥2.0696
Very fast switching
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
1+:¥3.3465
100+:¥1.6628
300+:¥1.6628
Saves PCB space due to small footprint
Suitable for high frequency applications due to fast switching characteristics
Suitable for logic level gate drive sources
Suitable for low gate drive sources
1+:¥2.5668
100+:¥1.2786
300+:¥1.2786
Logic-level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
1+:¥4.2279
100+:¥2.8493
300+:¥2.3634
Logic level compatibility
Trench MOSFET technology
Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)
1+:¥2.9962
100+:¥2.2165
300+:¥1.7193