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    共 693件相关商品
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    BSN20BK
    BSN20BKR
    60 V, N-channel Trench MOSFET

    • Logic-level compatible

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection: 2 kV HBM

    1+:¥2.0286

    100+:¥0.7587

    300+:¥0.7587

    243,000
    数据手册
    PMCM4401VPE
    PMCM4401VPEZ
    12 V, P-channel Trench MOSFET

    • Low threshold voltage

    • Ultra small package: 0.78 × 0.78 × 0.35 mm

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection > 2 kV HBM

    1+:¥2.1671

    100+:¥1.3020

    300+:¥1.2053

    180,000
    数据手册
    2N7002
    2N7002,215
    channel Trench MOSFET

    • Suitable for logic level gate drive sources

    • Very fast switching

    • Surface-mounted package

    • Trench MOSFET technology

    1+:¥1.2476

    100+:¥0.6082

    300+:¥0.5074

    45,000
    数据手册
    PMX300UNE
    PMX300UNEZ
    30 V, N-channel Trench MOSFET

    • Low threshold voltage

    • Leadless ultra small package 0.63mm x 0.33 mm x 0.25 mm

    • Trench MOSFET technology

    • Low profile (0.25 mm)

    • ElectroStatic Discharge (ESD) protection > 2 kV HBM

    1+:¥1.3027

    100+:¥0.8304

    300+:¥0.8304

    7,900
    数据手册

    限量供应

    PMH950UPE
    PMH950UPEH
    20 V, P-channel Trench MOSFET

    • Low threshold voltage

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection > 1 kV HBM

    • Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm

    1+:¥1.6721

    100+:¥0.9064

    300+:¥0.9064

    10000+:¥0.1124

    39,999
    数据手册

    限量供应

    PMZB200UNE
    PMZB200UNEYL
    30 V, N-channel Trench MOSFET

    • Very fast switching

    • Low threshold voltage

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection: 2 kV HBM

    • Ultra thin package profile of 0.37 mm

    1+:¥1.6721

    100+:¥0.8000

    300+:¥0.8000

    10000+:¥0.2105

    30,000
    数据手册

    限量供应

    PMCM4402UPE
    PMCM4402UPEZ
    20 V, P-channel Trench MOSFET

    • Low threshold voltage

    • Ultra small package 0.78 x 0.78 x 0.35 mm

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection > 2 kV HBM

    1+:¥1.2246

    100+:¥0.7712

    300+:¥0.7712

    9000+:¥0.3080

    27,000
    数据手册

    限量供应

    PMGD175XNE
    PMGD175XNEX
    30 V, Dual N-channel Trench MOSFET

    • Low threshold voltage

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection > 2 kV HBM

    1+:¥2.3682

    100+:¥1.1649

    300+:¥1.1649

    3000+:¥0.2662

    18,000
    数据手册

    限量供应

    PMV240SP
    PMV240SPR
    100 V, P-channel Trench MOSFET

    • Extended temperature range Tj = 175 °C

    • Trench MOSFET technology

    • Very fast switching

    1+:¥2.4974

    100+:¥1.7119

    300+:¥1.3141

    3000+:¥0.3523

    17,980
    数据手册

    限量供应

    NX1029X
    NX1029X,115
    60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET

    • Logic-level compatible

    • Very fast switching

    • Trench MOSFET technology

    • ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)

    1+:¥2.1196

    100+:¥1.2843

    300+:¥1.2842

    4000+:¥0.2425

    16,000
    数据手册

    限量供应

    PMPB07R3EN
    PMPB07R3ENAX
    30 V, N-channel Trench MOSFET

    • Logic-level compatible

    • Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies

    • Superfast switching with soft-recovery

    • Low spiking and ringing for low EMI designs

    • Exposed drain pad for excellent thermal conduction

    • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

    1+:¥3.1637

    100+:¥2.3383

    300+:¥1.8212

    3000+:¥0.6407

    12,000
    数据手册

    限量供应

    BST82
    BST82,215
    N-channel TrenchMOS intermediate level FET

    • Saves PCB space due to small footprint

    • Suitable for high frequency applications due to fast switching characteristics

    • Suitable for logic level gate drive sources

    1+:¥2.1196

    100+:¥1.4135

    300+:¥1.4135

    3000+:¥0.3409

    12,000
    数据手册

    限量供应

    BSH201
    BSH201,215
    P-channel vertical D-MOS logic level FET

    • Saves PCB space due to small footprint

    • Suitable for high frequency applications due to fast switching characteristics

    • Suitable for logic level gate drive sources

    • Suitable for low gate drive sources

    1+:¥2.2588

    100+:¥1.1253

    300+:¥1.1253

    3000+:¥0.4088

    12,000
    数据手册

    限量供应

    PXN4R7
    PXN4R7-30QLJ
    30QL - 30 V, N-channel Trench MOSFET

    • Logic-level compatible

    • Trench MOSFET technology

    • MLPAK33 package (3.3 x 3.3 mm footprint)

    1+:¥3.7206

    100+:¥2.5074

    300+:¥2.0798

    3000+:¥0.9487

    11,999
    数据手册

    限量供应

    PMV20XNE
    PMV20XNER
    30 V, N-channel Trench MOSFET

    • Trench MOSFET technology

    • Low threshold voltage

    • Enhanced power dissipation capability of 1200 mW

    • ElectroStatic Discharge (ESD) protection: 2 kV HBM

    1+:¥2.2190

    100+:¥1.1253

    300+:¥1.1253

    3000+:¥0.3162

    11,990
    数据手册

    限量供应

    PMZB950UPE
    PMZB950UPEYL
    20 V, P-channel Trench MOSFET

    • Trench MOSFET technology

    • Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm

    • ElectroStatic Discharge (ESD) protection > 1 kV HBM

    • Drain-source on-state resistance RDSon = 1.02 Ω

    1+:¥2.3766

    100+:¥0.8950

    300+:¥0.8950

    10000+:¥0.1611

    10,000
    数据手册

    限量供应

    PMZB950UPEL
    PMZB950UPELYL
    20 V, P-channel Trench MOSFET

    • Low leakage current

    • Trench MOSFET technology

    • Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm

    • ElectroStatic Discharge (ESD) protection > 1 kV HBM

    • Drain-source on-state resistance RDSon = 1.02 Ω

    1+:¥1.8993

    100+:¥0.8522

    300+:¥0.8522

    10000+:¥0.1659

    10,000
    数据手册

    限量供应

    PMZB670UPE
    PMZB670UPE,315
    20 V, single P-channel Trench MOSFET

    • Very fast switching

    • Low threshold voltage

    • Trench MOSFET technology

    • ESD protection up to 2 kV

    • Ultra thin package profile of 0.37 mm

    1+:¥2.3965

    100+:¥0.9019

    300+:¥0.9019

    10000+:¥0.1770

    10,000
    数据手册

    限量供应

    PMZB600UNE
    PMZB600UNEYL
    20 V, N-channel Trench MOSFET

    • Trench MOSFET technology

    • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm

    • ElectroStatic Discharge (ESD) protection > 1 kV HBM

    • Drain-source on-state resistance RDSon = 470 mΩ

    1+:¥2.0087

    100+:¥0.7736

    300+:¥0.7736

    10000+:¥0.1069

    10,000
    数据手册

    限量供应

    PMZB600UNEL
    PMZB600UNELYL
    20 V, N-channel Trench MOSFET

    • Low leakage current

    • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm

    • ElectroStatic Discharge (ESD) protection > 1 kV HBM

    • Drain-source on-state resistance RDSon = 470 mΩ

    1+:¥1.7501

    100+:¥0.7448

    300+:¥0.7448

    10000+:¥0.1106

    10,000
    数据手册