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    PBSS5540X
    PBSS5540X,135
    40 V, 5 A PNP low VCEsat (BISS) transistor
    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability: IC and ICM

    • High efficiency leading to less heat generation.

    • AEC-Q101 qualified

    1+:¥2.9510

    100+:¥2.0244

    300+:¥1.5611

    24,000
    数据手册
    PBSS4540X
    PBSS4540X,135
    40 V, 5 A NPN low VCEsat (BISS) transistor
    • High hFE and low VCEsat at high current operation

    • High collector current capability: IC maximum 4 A

    • High efficiency leading to less heat generation.

    • AEC-Q101 qualified

    1+:¥2.8154

    100+:¥2.0922

    300+:¥1.6176

    23,980
    数据手册
    BCM847QAS
    BCM847QASZ
    45 V, 100 mA NPN/NPN matched double transistors
    • Reduces component count

    • Reduces pick and place costs

    • Low package height of 0.37 mm

    • Current gain matching

    • Base-emitter voltage matching

    • Application-optimized pinout

    • AEC-Q101 qualified

    1+:¥2.5555

    100+:¥1.3690

    300+:¥1.3690

    15,000
    数据手册
    PBSS9110X
    PBSS9110X,135
    100 V, 1 A PNP low VCEsat (BISS) transistor
    • SOT89 package

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High efficiency leading to less heat generation

    • AEC-Q101 qualified

    1+:¥2.6798

    100+:¥1.4481

    300+:¥1.4481

    12,000
    数据手册
    BCM62B
    BCM62B,215
    PNP/PNP matched double transistor
    • Current gain matching

    • AEC-Q101 qualified

    1+:¥2.3521

    100+:¥1.2560

    300+:¥1.2560

    12,000
    数据手册
    PUMH13
    PUMH13-QF
    Q - NPN/NPN double Resistor-Equipped Transistor (RET); R1= 4.7 kΩ, R2 = 47 kΩ
    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥1.9775

    100+:¥1.0498

    300+:¥0.6916

    10,000
    数据手册
    PMBT3906MB
    PMBT3906MB,315
    40 V, 200 mA PNP switching transistor
    • Single general-purpose switching transistor

    • AEC-Q101 qualified

    • Ultra small SMD plastic package

    • Board-space reduction

    • Low package height of 0.37 mm

    1+:¥1.7289

    100+:¥0.6667

    300+:¥0.6667

    10,000
    数据手册
    PMBT3904MB
    PMBT3904MB,315
    40 V, 200 mA NPN switching transistor
    • Single general-purpose switching transistor

    • Ultra small SMD plastic package

    • Board-space reduction

    • Low package height of 0.37 mm

    • AEC-Q101 qualified

    1+:¥1.6724

    100+:¥0.6181

    300+:¥0.6181

    10,000
    数据手册
    PMBT3904M
    PMBT3904M,315
    40 V, 200 mA NPN switching transistor
    • Single general-purpose switching transistor

    • Board-space reduction

    • Ultra small SMD plastic package

    • AEC-Q101 qualified

    1+:¥1.0419

    100+:¥0.4147

    300+:¥0.4147

    10,000
    数据手册
    PMBT2907AM
    PMBT2907AMYL
    60 V, 600 mA PNP switching transistor
    • High current (max. 600 mA)

    • Low voltage (max. 60 V)

    • Leadless ultra small SMD plastic package

    • Low package height of 0.50 mm

    • Power dissipation comparable to SOT23

    • AEC-Q101 qualified

    1+:¥0.7978

    100+:¥0.3740

    300+:¥0.3740

    10,000
    数据手册
    PMBT2907AMB
    PMBT2907AMBYL
    60 V, 600 mA PNP switching transistor
    • High current (max. 600 mA)

    • Low voltage (max. 60V)

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    • Power dissipation comparable to SOT23

    • AEC-Q101 qualified

    1+:¥1.7176

    100+:¥0.6995

    300+:¥0.6995

    10,000
    数据手册
    PDTC144WMB
    PDTC144WMB,315
    NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ
    • 100 mA output current capability

    • Reduces component count

    • Built-in bias resistors

    • Reduces pick and place costs

    • Simplifies circuit design

    • AEC-Q101 qualified

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    1+:¥1.5255

    100+:¥0.9684

    300+:¥0.9684

    10,000
    数据手册
    PDTC144VMB
    PDTC144VMB,315
    NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ
    • 100 mA output current capability

    • Reduces component count

    • Built-in bias resistors

    • Reduces pick and place costs

    • Simplifies circuit design

    • AEC-Q101 qualified

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    1+:¥1.6611

    100+:¥0.6351

    300+:¥0.6351

    10,000
    数据手册
    PDTC144EMB
    PDTC144EMB,315
    NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ
    • 100 mA output current capability

    • Reduces component count

    • Built-in bias resistors

    • Reduces pick and place costs

    • Simplifies circuit design

    • AEC-Q101 qualified

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    1+:¥1.7967

    100+:¥0.6351

    300+:¥0.6351

    10,000
    数据手册
    PDTC144EM
    PDTC144EM,315
    50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ
    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥0.4836

    100+:¥0.3869

    300+:¥0.3869

    10,000
    数据手册
    PDTC143ZMB
    PDTC143ZMB,315
    NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ
    • 100 mA output current capability

    • Reduces component count

    • Built-in bias resistors

    • Reduces pick and place costs

    • Simplifies circuit design

    • AEC-Q101 qualified

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    1+:¥0.5566

    100+:¥0.3318

    300+:¥0.3318

    10,000
    数据手册
    PDTC143ZM
    PDTC143ZM,315
    50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47  kΩ
    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥1.9210

    100+:¥0.6836

    300+:¥0.6837

    10,000
    数据手册
    PDTC143X series
    PDTC143XM,315
    NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    1+:¥1.7741

    100+:¥0.6836

    300+:¥0.6837

    10,000
    数据手册
    PDTC143TMB
    PDTC143TMB,315
    NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open
    • 100 mA output current capability

    • Reduces component count

    • Built-in bias resistors

    • Reduces pick and place costs

    • Simplifies circuit design

    • AEC-Q101 qualified

    • Leadless ultra small SMD plastic package

    • Low package height of 0.37 mm

    1+:¥1.5255

    100+:¥0.9684

    300+:¥0.9684

    10,000
    数据手册
    PDTC143T series
    PDTC143TM,315
    NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open
    • Built-in bias resistors

    • Simplified circuit design

    • Reduction of component count

    • Reduced pick and place costs.

    • AEC-Q101 qualified

    1+:¥1.9210

    100+:¥0.6836

    300+:¥0.6837

    10,000
    数据手册