- 产品
- 描述
- 价格
- 库存
- 数据手册
- 操作
PUMD3-QXQ - 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥1.3048
100+:¥0.6371
300+:¥0.5316
- 228,000
- 数据手册
PUMH18,11550 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 10 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1+:¥1.2231
100+:¥0.5509
300+:¥0.5509
- 105,000
- 数据手册
PDTC114ET-QRQ - 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.7973
100+:¥0.4289
300+:¥0.3366
- 68,900
- 数据手册
BC807-40-QRQ series - 45 V, 500 mA PNP general-purpose transistorsHigh current
Three current gain selections
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥1.0859
100+:¥0.5863
300+:¥0.5862
- 51,000
- 数据手册
PBSS5540X,13540 V, 5 A PNP low VCEsat transistorLow collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High efficiency leading to less heat generation.
AEC-Q101 qualified
1+:¥2.5969
100+:¥1.7815
300+:¥1.3739
- 20,000
- 数据手册
PBSS4540X,13540 V, 5 A NPN low VCEsat transistorHigh hFE and low VCEsat at high current operation
High collector current capability: IC maximum 4 A
High efficiency leading to less heat generation.
AEC-Q101 qualified
1+:¥2.4776
100+:¥1.8411
300+:¥1.4235
- 19,980
- 数据手册
PMBT3906-QRQ - PNP switching transistorCollector-emitter voltage VCEO = - 40 V
Collector-current capability IC = - 200 mA
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥0.1752
100+:¥0.1593
300+:¥0.1448
- 15,000
- 数据手册
BCM847QASZ45 V, 100 mA NPN/NPN matched double transistorsReduces component count
Reduces pick and place costs
Low package height of 0.37 mm
Current gain matching
Base-emitter voltage matching
Application-optimized pinout
AEC-Q101 qualified
1+:¥2.2488
100+:¥1.2047
300+:¥1.2047
- 15,000
- 数据手册
PBSS9110X,135100 V, 1 A PNP low VCEsat (BISS) transistorSOT89 package
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to less heat generation
AEC-Q101 qualified
1+:¥2.3582
100+:¥1.2743
300+:¥1.2743
- 12,000
- 数据手册
BCM62B,215PNP/PNP matched double transistorCurrent gain matching
AEC-Q101 qualified
1+:¥2.0698
100+:¥1.1053
300+:¥1.1053
- 12,000
- 数据手册
PUMH13-QFQ - NPN/NPN double Resistor-Equipped Transistor (RET); R1= 4.7 kΩ, R2 = 47 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Qualified according to AEC-Q101 and recommended for use in automotive applications
1+:¥1.7402
100+:¥0.9238
300+:¥0.6086
- 10,000
- 数据手册
PMBT3906MB,31540 V, 200 mA PNP switching transistorSingle general-purpose switching transistor
AEC-Q101 qualified
Ultra small SMD plastic package
Board-space reduction
Low package height of 0.37 mm
1+:¥1.5214
100+:¥0.5867
300+:¥0.5867
- 10,000
- 数据手册
PMBT3904MB,31540 V, 200 mA NPN switching transistorSingle general-purpose switching transistor
Ultra small SMD plastic package
Board-space reduction
Low package height of 0.37 mm
AEC-Q101 qualified
1+:¥1.4717
100+:¥0.5439
300+:¥0.5439
- 10,000
- 数据手册
PMBT3904M,31540 V, 200 mA NPN switching transistorSingle general-purpose switching transistor
Board-space reduction
Ultra small SMD plastic package
AEC-Q101 qualified
1+:¥0.9169
100+:¥0.3649
300+:¥0.3649
- 10,000
- 数据手册
PMBT2907AMYL60 V, 600 mA PNP switching transistorHigh current (max. 600 mA)
Low voltage (max. 60 V)
Leadless ultra small SMD plastic package
Low package height of 0.50 mm
Power dissipation comparable to SOT23
AEC-Q101 qualified
1+:¥0.7021
100+:¥0.3291
300+:¥0.3291
- 10,000
- 数据手册
PDTC144WMB,315NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ100 mA output current capability
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
AEC-Q101 qualified
Leadless ultra small SMD plastic package
Low package height of 0.37 mm
1+:¥1.3424
100+:¥0.8522
300+:¥0.8522
- 10,000
- 数据手册
PDTC144VMB,315NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ100 mA output current capability
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
AEC-Q101 qualified
Leadless ultra small SMD plastic package
Low package height of 0.37 mm
1+:¥1.4618
100+:¥0.5589
300+:¥0.5589
- 10,000
- 数据手册
PDTC144EMB,31550 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ100 mA output current capability
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
AEC-Q101 qualified
Leadless ultra small SMD plastic package
Low package height of 0.37 mm
1+:¥1.5811
100+:¥0.5589
300+:¥0.5589
- 10,000
- 数据手册
PDTC144EM,31550 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1+:¥0.4256
100+:¥0.3405
300+:¥0.3405
- 10,000
- 数据手册
PDTC143ZMB,315NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ100 mA output current capability
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
AEC-Q101 qualified
Leadless ultra small SMD plastic package
Low package height of 0.37 mm
1+:¥0.4898
100+:¥0.2920
300+:¥0.2920
- 10,000
- 数据手册