Reverse stand-off voltage: V_RWM = 24 V

Low clamping voltage: V_CL= 33 V at I_PP = 3.5 A

ESD protection up to 30 kV (IEC 61000-4-2)

ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω)

ISO 7637-3: Pulse a: V_S = -150 V / Pulse b: V_S = +100 V

Ultra low leakage current: I_RM < 1 nA

Qualified according to AEC-Q101 / Automotive grade

Reverse stand-off voltage: V_RWM = 24 V

Low clamping voltage: V_CL= 30 V at I_PP = 1 A

ESD protection up to 30 kV (IEC 61000-4-2)

Ultra low capacitance: C_d = 10 pF

ESD protection up to 30 kV (ISO 10605; C = 150 pF; R = 330 Ω)

High temperature capability: T_j = 175 °C

AEC-Q101 qualified

Average forward current: I_F(AV) ≤ 0.2 A

Reverse voltage: V_R ≤ 60 V

Low forward voltage V_F ≤ 600 mV

AEC-Q101 qualified

Solderable side pads

Package height typ. 0.37 mm

Forward current: I_F ≤ 1 A

Reverse voltage: V_R ≤ 30 V

Low forward voltage typ. V_F = 450 mV

Low reverse current typ. I_R = 40 µA

Small SMD plastic package

Logic-level compatible

Very fast switching

Trench MOSFET technology

ESD protection up to 1 kV

AEC-Q101 qualified

ESD protection of one automotive LIN-bus line

Asymmetrical diode configuration ensures an optimized protection against ElectroMagnetic Interferences (EMI) of a LIN Electronic Control Unit (ECU)

Max. peak pulse power: P_PP = 160W at t_p = 8/20 μs

Low clamping voltage: V_CL = 40 V at I_PP = 1 A

Ultra low leakage current: I_RM < 1 nA

ESD protection of up to 23 kV

IEC 61000-4-2, level 4 (ESD)

IEC 61000-4-5 (surge); I_PP = 3 A at t_p = 8/20 μs

AEC-Q101 qualified

Low threshold voltage

Leadless ultra small package; 0.63 x 0.33 x 0.25 mm

Trench MOSFET technology

Low profile (0.25 mm)

Low threshold voltage

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm

Average forward current: I_F(AV) ≤ 1 A

Reverse voltage: V_R ≤ 40 V

Low forward voltage, typical: V_F = 435 mV

Low reverse current, typical: I_R = 325 µA

Package height typ. 270 µm

Very fast switching

Low threshold voltage

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection: 2 kV HBM

Ultra thin package profile of 0.37 mm

Forward current: I_F ≤ 1 A

Reverse voltage: V_R ≤ 60 V

Very low forward voltage

Small and flat lead SMD plastic package

Forward current: I_F ≤ 0.5 A

Reverse voltage: V_R ≤ 30 V

Low forward voltage typ. V_F = 380 mV

Low reverse current typ. I_R = 40 µA

Small SMD plastic package

Forward current: I_F ≤ 0.5 A

AEC-Q101 qualified

Reverse voltage: V_R ≤ 20 V

Solderable side pads

Low forward voltage: V_F ≤ 500 mV

Package height typ. 0.37 mm

Low reverse current

Ultra small and leadless SMD plastic package

High current (max. 600 mA)

Low voltage (max. 40 V)

AEC-Q101 qualified

High current (max. 600 mA)

Low voltage (max. 40V)

Leadless ultra small SMD plastic package

Low package height of 0.50 mm

Power dissipation comparable to SOT23

Total power dissipation: P_tot ≤ 250 mW

Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

Two tolerance series: ± 2 % and ± 5 %

Leadless ultra small plastic package suitable for surface-mounted design

AEC-Q101 qualified

High current

Three current gain selections

AEC-Q101 qualified

High switching speed

Low leakage current

High breakdown voltage

Low capacitance