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    BZX884 series
    BZX884-C16,315
    Voltage regulator diodes
    • Total power dissipation: Ptot ≤ 250 mW

    • Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

    • Two tolerance series: ± 2 % and ± 5 %

    • Leadless ultra small plastic package suitable for surface-mounted design

    • AEC-Q101 qualified

    ¥0.00¥1.5513

    710,000
    数据手册
    BAV99
    BAV99,215
    High-speed switching diode
    • High switching speed: trr ≤ 4 ns

    • Low capacitance: Cd ≤ 1.5 pF

    • Low leakage current

    • Reverse voltage: VR ≤ 100 V

    • Small SMD plastic packages

    ¥0.00¥0.6499

    497,940
    数据手册
    BZX384 series
    BZX384-C15,115
    Voltage regulator diodes
    • Total power dissipation: max. 300 mW
    • Two tolerance series: +-2pct and approx. +-5pct
    • Working voltage range: nominal 2.4 to 75 V (E24 range)
    • Non-repetitive peak reverse power dissipation: max. 40 W.
    • AEC-Q101 qualified

    ¥0.00¥0.9308

    404,730
    数据手册
    PESD1IVN24
    PESD1IVN24-AX
    A - ESD protection for In-vehicle networks
    • Reverse stand-off voltage: VRWM = 24 V

    • Low clamping voltage: VCL= 33 V at IPP = 3.5 A

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω)

    • ISO 7637-3: Pulse a: VS = -150 V / Pulse b: VS = +100 V

    • Ultra low leakage current: IRM < 1 nA

    • Qualified according to AEC-Q101 / Automotive grade

    ¥0.00¥1.7119

    392,474
    数据手册
    BCP56T Series
    BCP56-16TF
    80 V, 1 A NPN medium power transistors
    • High collector current capability IC and ICM
    • Three current gain selections
    • High power dissipation capability
    • AEC-Q101 qualified

    ¥0.00¥0.7400

    303,980
    数据手册
    PESD1CAN
    PESD1CAN,215
    CAN bus ESD protection diode
    • One small SOT23 package to protect two CAN bus lines

    • Peak pulse power, max.: PPP = 200 W at tp = 8/20 µs

    • Low clamping voltage: VCL = 40 V at IPP = 1 A

    • Ultra low leakage current, typ.: IRM <1 nA

    • Diode capacitance matching, typ.: ΔCd/Cd = 0.1 %

    • ESD protection up to 23 kV; IEC 61000-4-2, level 4

    • IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs

    • AEC-Q101 qualified

    ¥0.00¥2.0301

    284,990
    数据手册
    PESD1IVN27A
    PESD1IVN27A-QX
    Q - ESD protection for In-vehicle networks
    • Reverse stand-off voltage: VRWM = 27 V

    • Low clamping voltage: VCL = 36 V at IPP = 3 A

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω)

    • ISO 7637-3: Pulse a: VS = -150 V / Pulse b: VS = +100 V

    • Ultra low leakage current: IRM < 1 nA

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    ¥0.00¥1.8993

    182,300
    数据手册
    vp_BC807W_SER
    BC807-40W,115
    45 V, 500 mA PNP general-purpose transistors
    • High current

    • Three current gain selections

    ¥0.00¥0.8094

    153,000
    数据手册
    vp_BC807_SER
    BC807-40,215
    45 V, 500 mA PNP general-purpose transistors
    • High current

    • Three current gain selections

    ¥0.00¥0.5658

    144,000
    数据手册
    74LVC1G08
    74LVC1G08GW-Q100,1
    Q100 - Single 2-input AND gate
    • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

      • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

    • Wide supply voltage range from 1.65 V to 5.5 V

    • High noise immunity

    • ±24 mA output drive (VCC = 3.0 V)

    • CMOS low power dissipation

    • Direct interface with TTL levels

    • Overvoltage tolerant inputs to 5.5 V

    • IOFF circuitry provides partial Power-down mode operation

    • Latch-up performance ≤ 250 mA

    • Complies with JEDEC standard:

      • JESD8-7 (1.65 V to 1.95 V)

      • JESD8-5 (2.3 V to 2.7 V)

      • JESD8C (2.7 V to 3.6 V)

      • JESD36 (4.5 V to 5.5 V)

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    ¥0.00¥1.3623

    144,000
    数据手册
    PESD24VS1UB
    PESD24VS1UB,115
    ESD protection diode in SOD523 package
    • Unidirectional ESD protection of one line

    • Low clamping voltage: VCL = 70 V at IPPM = 3 A

    • ESD protection > 23 kV

    • IEC 61000-4-5 (surge); IPPM = 3 A at tp = 8/20 µs

    ¥0.00¥1.5115

    111,000
    数据手册
    BAV102
    BAV103,115
    Single general-purpose switching diodes
    • High switching speed: trr ≤ 50 ns

    • Low capacitance: Cd ≤ 5 pF

    • Low leakage current

    • Small hermetically sealed glass SMD package

    ¥0.00¥1.1535

    110,000
    数据手册
    PUMH18
    PUMH18,115
    50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 10 kΩ
    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    • AEC-Q101 qualified

    ¥0.00¥1.2231

    105,000
    数据手册
    BZX84 series
    BZX84-C4V7,215
    Voltage regulator diodes
    • Total power dissipation: ≤ 250 mW
    • Three tolerance series: ±1%, ±2% and approximately ±5%
    • AEC-Q101 qualified
    • Working voltage range: nominal 2.4 V to 75 V (E24 range)
    • Non-repetitive peak reverse power dissipation: ≤ 40 W

    ¥0.00¥0.7587

    104,898
    数据手册
    PUMH11
    PUMH11,115
    50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ
    • 100 mA output current capability

    • Built-in bias resistors

    • Simplifies circuit design

    • Reduces component count

    • Reduces pick and place costs

    ¥0.00¥1.1237

    90,000
    数据手册
    PESD2V5Y1BSF
    PESD2V5Y1BSFYL
    Extremely low capacitance bidirectional ESD protection diode
    • Bidirectional ESD protection of one line

    • Extremely low trigger-voltage Vt1 < 5 V

    • Extremely low diode capacitance Cd = 0.25 pF

    • Extremely low clamping voltage to protect sensitive I/Os

    • Extremely low-inductance protection path to ground

    • ESD protection up to ±15 kV according to IEC 61000-4-2

    • Ultra small SMD package

    ¥0.00¥1.8794

    90,000
    数据手册
    BAT54SW
    BAT54SW,115
    Schottky barrier diode
    • Low forward voltage

    • Low capacitance

    ¥0.00¥0.8522

    90,000
    数据手册
    BZX84J series
    BZX84J-B18,115
    Single Zener diodes
    • Non-repetitive peak reverse power dissipation: ≤ 40 W

    • Wide working voltage range: nominal 2.4 V to 75 V (E24 range)

    • Total power dissipation: ≤ 550 mW

    • Two tolerance series: ±2 % and ±5 %

    • AEC-Q101 qualified

    • Low differential resistance

    • Small plastic package suitable for surface-mounted design

    ¥0.00¥1.5513

    80,500
    数据手册
    PESD2IVN24
    PESD2IVN24-TR
    T - ESD protection for In-vehicle networks
    • Reverse stand-off voltage: VRWM = 24 V

    • Low clamping voltage: VCL= 33 V at IPP = 3.5 A

    • Typ. diode capacitance matching: ∆Cd/Cd = 0.1 %

    • ESD protection up to 30 kV (IEC 61000-4-2)

    • ESD protection up to 30 kV (ISO 10605; C = 330 pF, R = 330 Ω)

    • ISO 7637-3: Pulse a: VS = -150 V / Pulse b: VS = +100 V

    • Ultra low leakage current: IRM < 1 nA

    • Qualified according to AEC-Q101 / Automotive grade

    ¥0.00¥1.5712

    77,650
    数据手册
    PESD1CAN
    PESD1CAN-UX
    U - CAN bus ESD protection diode
    • One very small SOT323 package to protect two CAN bus lines

    • Low clamping voltage VCL = 35 V at IPP = 1 A

    • Typical diode capacitance matching ΔCd/Cd = 0.1 %

    • ESD protection up to 23 kV; IEC 61000-4-2, level 4

    • IEC 61000-4-5 (surge); IPPM = 3 A at tp = 8/20 μs

    • AEC-Q101 qualified

    ¥0.00¥2.0087

    65,850
    数据手册