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    新品推荐共 90 件推荐产品
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    PMEG100T10ELXD
    PMEG100T10ELXD-QX
    Q - 100 V, 1 A Trench Schottky barrier rectifier

    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Power flat lead plastic package with exposed heatsink for optimal thermal connection

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.1181

    100+:¥1.0640

    300+:¥1.0640

    54,000
    数据手册
    PESD32VF1BLS
    PESD32VF1BLS-QYL
    Q - Ultra-low capacitance bidirectional ESD protection diode

    • Ultra low diode capacitance Cd = 0.28 pF

    • High reverse standoff voltage VRWM = 32 V

    • Very small voltage dependency of the capacitance

    • ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.2971

    100+:¥1.1634

    300+:¥1.1634

    10,000
    数据手册
    PESD30VF1BLS
    PESD30VF1BLS-QYL
    Q - Ultra-low capacitance bidirectional ESD protection diode

    • Ultra low diode capacitance Cd = 0.28 pF

    • High reverse standoff voltage VRWM = 30 V

    • Very small voltage dependency of the capacitance

    • ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.2493

    100+:¥1.1349

    300+:¥1.1349

    10,000
    数据手册
    PESD24VF1BLS
    PESD24VF1BLS-QYL
    Q - Ultra-low capacitance bidirectional ESD protection diode

    • Ultra low diode capacitance Cd = 0.28 pF

    • High reverse standoff voltage VRWM = 24 V

    • Very small voltage dependency of the capacitance

    • ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.6023

    100+:¥0.4818

    300+:¥0.4818

    10,000
    数据手册
    PESD18VF1BLS
    PESD18VF1BLS-QYL
    Q - Ultra-low capacitance bidirectional ESD protection diode

    • Ultra low diode capacitance Cd = 0.31 pF

    • High reverse standoff voltage VRWM = 18 V

    • Very small voltage dependency of the capacitance

    • ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.1182

    100+:¥1.0692

    300+:¥1.0692

    10,000
    数据手册
    PESD5V5C1UL
    PESD5V5C1UL-QYL
    Q - Extremely low clamping unidirectional ESD protection diode

    • Unidirectional ESD protection of one line

    • Ultra low capacitance: Cd < 0.6 pF

    • ESD protection starting from 15 kV (IEC 61000-4-2; ISO 10605)

    • Deep snap-back combined with dynamic resistance of 0.3 Ohm

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.5541

    100+:¥0.4433

    300+:¥0.4433

    9,999
    数据手册
    vp_PESD6V3S1UL
    PESD6V3S1ULYL
    Unidirectional ESD protection diode

    • ESD protection of one line

    • Ultra small SMD plastic package

    • ESD protection up to 30 kV

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61000-4-5 (surge); IPP = 10.4 A

    • Ultra low leakage current: IRM typ. 60 nA

    1+:¥0.4508

    100+:¥0.2687

    300+:¥0.2687

    9,994
    数据手册
    PESD24VF1BBL
    PESD24VF1BBLYL
    Bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • High reverse standoff voltage VRWM = 24 V

    • Ultra-low diode capacitance Cd = 0.28 pF

    • Ultra small plastic package 1.0 x 0.6 x 0.48 mm

    • ESD protection up to ±10 kV contact discharge according to IEC 61000-4-2

    1+:¥0.4836

    100+:¥0.3125

    300+:¥0.3124

    9,990
    数据手册
    PESD5V5HS2
    PESD5V5HS2-SFYL
    SF - Extremely low capacitance bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Extremely high surge robustness of 5.5 A 8/20 µs

    • Extremely low diode capacitance Cd = 0.45 pF max

    • Extremely low clamping voltage to protect sensitive I/Os

    • Extremely low-inductance protection path to ground

    • ESD protection up to ±15 kV according to IEC 61000-4-2

    • Ultra small SMD package

    1+:¥0.3064

    100+:¥0.1547

    300+:¥0.1547

    9,000
    数据手册
    PESD5V0R1BDSF
    PESD5V0R1BDSFYL
    Extremely low clamping bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance, Cd = 0.1 pF at 10 GHz

    • Extremely low clamping voltage to protect sensitive transceivers

    • Extremely low leakage current < 1 nA at 5 V

    • Extremely low inductance protection path to ground

    • Very high surge robustness: 4.8 A for 8/20 µs pulse

    • Extremely low insertion loss: -0.28 dB at 10 GHz

    • Extremely low return loss: -19 dB at 10 GHz

    • 20 Gbps capable

    • Ultra-small SMD package

    1+:¥1.2430

    100+:¥0.6086

    300+:¥0.6086

    9,000
    数据手册
    PESD5V0R1BBSF
    PESD5V0R1BBSFYL
    Extremely low capacitance bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance Cd = 0.08 pF

    • Extremely low insertion loss αIL = -0.19 dB at 10 GHz

    • Extremely low return loss αRL = -23.5 dB at 10 GHz

    • Low clamping voltage to protect sensitive I/Os

    • Extremely low inductance protection path to ground

    • Ultra small SMD package

    • Extremely low leakage < 1 nA typical at 5 V

    1+:¥1.5015

    100+:¥0.7946

    300+:¥0.5231

    9,000
    数据手册
    PESD5V0R1BCSF
    PESD5V0R1BCSFYL
    Extremely low clamping bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance, Cd = 0.085 pF at 10 GHz

    • Extremely low insertion loss: -0.25 dB at 10 GHz

    • Extremely low return loss: -19.4 dB at 10 GHz

    • Extremely low clamping voltage to protect sensitive transceivers

    • Extremely low leakage current < 1 nA at 5 V

    • Extremely low inductance protection path to ground

    • 20 Gbps capable

    • Ultra-small SMD package

    1+:¥1.5015

    100+:¥0.7946

    300+:¥0.5231

    8,995
    数据手册
    PESD5V5C1BL
    PESD5V5C1BL-QYL
    Q - Extremely low clamping bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Ultra low capacitance: Cd < 0.3 pF

    • ESD protection starting from 15 kV (IEC 61000-4-2; ISO 10605)

    • Deep snap-back combined with dynamic resistance of 0.35 Ohm

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.5541

    100+:¥0.4433

    300+:¥0.4433

    6,800
    数据手册
    PMCXB290UE
    PMCXB290UEZ
    20 V, complementary N/P-channel Trench MOSFET

    • Low threshold voltage

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection typically > 2 kV HBM

    1+:¥2.1578

    100+:¥1.3424

    300+:¥1.3424

    5,000
    数据手册
    PMDXB590UPE
    PMDXB590UPEZ
    20 V, dual P-channel Trench MOSFET

    • Low threshold voltage

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection typically > 2 kV HBM

    1+:¥2.0882

    100+:¥1.3027

    300+:¥1.3027

    4,990
    数据手册
    PMEG45T20EXD
    PMEG45T20EXD-QX
    Q - 45 V, 2 A Trench MEGA Schottky barrier rectifier

    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Power flat lead plastic package with exposed heatsink for optimal thermal connection

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.1982

    100+:¥1.1101

    300+:¥1.1101

    4,500
    数据手册
    PMEG100T20ELXD
    PMEG100T20ELXDX
    100 V, 2 A Trench Schottky barrier rectifier

    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Power flat lead plastic package with exposed heatsink for optimal thermal connection

    1+:¥0.6122

    100+:¥0.3076

    300+:¥0.3076

    4,500
    数据手册
    PNU65020EP
    PNU65020EPX
    650 V, 2 A ultrafast recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 2 A

    • Typical switching time trr of 35 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥1.2600

    100+:¥0.8800

    300+:¥0.6800

    3,000
    数据手册
    PNU65010EP
    PNU65010EPX
    650 V, 1 A ultrafast recovery rectifier

    • Reverse voltage VR ≤ 650 V

    • Forward current IF ≤ 1 A

    • Typical switching time trr of 35 ns

    • Pt doped life time control

    • Low inductance

    • Power and flat lead SMD plastic package

    • High power capability due to clip-bond technology

    • Planar die design

    1+:¥2.4959

    100+:¥1.4916

    300+:¥1.3922

    3,000
    数据手册
    NXB0106
    NXB0106BQX
    Dual supply translating transceiver; auto direction sensing; 3-state

    • Wide supply voltage range:

      • VCC(A): 1.2 V to 3.6 V and VCC(B): 1.65 V to 5.5 V

    • IOFF circuitry provides partial Power-down mode operation

    • Inputs accept voltages up to 5.5 V

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2500 V for A port

      • HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 15000 V for B port

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1500 V

    • Latch-up performance exceeds 100 mA per JESD 78B Class II

    • Specified from −40 °C to +85 °C and −40 °C to +125 °C

    1+:¥5.3300

    100+:¥4.1566

    300+:¥3.4406

    3,000
    数据手册