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    新品推荐共 89 件推荐产品
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    PESD5V5C1BL
    PESD5V5C1BL-QYL
    Q - Extremely low clamping bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Ultra low capacitance: Cd < 0.3 pF

    • ESD protection starting from 15 kV (IEC 61000-4-2; ISO 10605)

    • Deep snap-back combined with dynamic resistance of 0.35 Ohm

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.6296

    100+:¥0.5037

    300+:¥0.5038

    10,000
    数据手册
    PESD32VF1BLS
    PESD32VF1BLS-QYL
    Q - Ultra-low capacitance bidirectional ESD protection diode

    • Ultra low diode capacitance Cd = 0.28 pF

    • High reverse standoff voltage VRWM = 32 V

    • Very small voltage dependency of the capacitance

    • ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.6103

    100+:¥1.3221

    300+:¥1.3221

    10,000
    数据手册
    PESD30VF1BLS
    PESD30VF1BLS-QYL
    Q - Ultra-low capacitance bidirectional ESD protection diode

    • Ultra low diode capacitance Cd = 0.28 pF

    • High reverse standoff voltage VRWM = 30 V

    • Very small voltage dependency of the capacitance

    • ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.5560

    100+:¥1.2897

    300+:¥1.2897

    10,000
    数据手册
    PESD24VF1BLS
    PESD24VF1BLS-QYL
    Q - Ultra-low capacitance bidirectional ESD protection diode

    • Ultra low diode capacitance Cd = 0.28 pF

    • High reverse standoff voltage VRWM = 24 V

    • Very small voltage dependency of the capacitance

    • ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.6844

    100+:¥0.5475

    300+:¥0.5475

    10,000
    数据手册
    PESD18VF1BLS
    PESD18VF1BLS-QYL
    Q - Ultra-low capacitance bidirectional ESD protection diode

    • Ultra low diode capacitance Cd = 0.31 pF

    • High reverse standoff voltage VRWM = 18 V

    • Very small voltage dependency of the capacitance

    • ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.4070

    100+:¥1.2150

    300+:¥1.2150

    10,000
    数据手册
    PESD5V5C1UL
    PESD5V5C1UL-QYL
    Q - Extremely low clamping unidirectional ESD protection diode

    • Unidirectional ESD protection of one line

    • Ultra low capacitance: Cd < 0.6 pF

    • ESD protection starting from 15 kV (IEC 61000-4-2; ISO 10605)

    • Deep snap-back combined with dynamic resistance of 0.3 Ohm

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥0.6296

    100+:¥0.5037

    300+:¥0.5038

    9,999
    数据手册
    vp_PESD6V3S1UL
    PESD6V3S1ULYL
    Unidirectional ESD protection diode

    • ESD protection of one line

    • Ultra small SMD plastic package

    • ESD protection up to 30 kV

    • IEC 61000-4-2; level 4 (ESD)

    • IEC 61000-4-5 (surge); IPP = 10.4 A

    • Ultra low leakage current: IRM typ. 60 nA

    1+:¥0.3468

    100+:¥0.2067

    300+:¥0.2067

    9,994
    数据手册
    PESD24VF1BBL
    PESD24VF1BBLYL
    Bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • High reverse standoff voltage VRWM = 24 V

    • Ultra-low diode capacitance Cd = 0.28 pF

    • Ultra small plastic package 1.0 x 0.6 x 0.48 mm

    • ESD protection up to ±10 kV contact discharge according to IEC 61000-4-2

    1+:¥0.4836

    100+:¥0.3125

    300+:¥0.3124

    9,990
    数据手册
    PESD5V5HS2
    PESD5V5HS2-SFYL
    SF - Extremely low capacitance bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Extremely high surge robustness of 5.5 A 8/20 µs

    • Extremely low diode capacitance Cd = 0.45 pF max

    • Extremely low clamping voltage to protect sensitive I/Os

    • Extremely low-inductance protection path to ground

    • ESD protection up to ±15 kV according to IEC 61000-4-2

    • Ultra small SMD package

    1+:¥1.9750

    100+:¥0.9968

    300+:¥0.9968

    9,000
    数据手册
    PESD5V0R1BDSF
    PESD5V0R1BDSFYL
    Extremely low clamping bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance, Cd = 0.1 pF at 10 GHz

    • Extremely low clamping voltage to protect sensitive transceivers

    • Extremely low leakage current < 1 nA at 5 V

    • Extremely low inductance protection path to ground

    • Very high surge robustness: 4.8 A for 8/20 µs pulse

    • Extremely low insertion loss: -0.28 dB at 10 GHz

    • Extremely low return loss: -19 dB at 10 GHz

    • 20 Gbps capable

    • Ultra-small SMD package

    1+:¥1.4125

    100+:¥0.6916

    300+:¥0.6916

    9,000
    数据手册
    PESD5V0R1BBSF
    PESD5V0R1BBSFYL
    Extremely low capacitance bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance Cd = 0.08 pF

    • Extremely low insertion loss αIL = -0.19 dB at 10 GHz

    • Extremely low return loss αRL = -23.5 dB at 10 GHz

    • Low clamping voltage to protect sensitive I/Os

    • Extremely low inductance protection path to ground

    • Ultra small SMD package

    • Extremely low leakage < 1 nA typical at 5 V

    1+:¥1.7063

    100+:¥0.9029

    300+:¥0.5944

    9,000
    数据手册
    PESD5V0R1BCSF
    PESD5V0R1BCSFYL
    Extremely low clamping bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Extremely low diode capacitance, Cd = 0.085 pF at 10 GHz

    • Extremely low insertion loss: -0.25 dB at 10 GHz

    • Extremely low return loss: -19.4 dB at 10 GHz

    • Extremely low clamping voltage to protect sensitive transceivers

    • Extremely low leakage current < 1 nA at 5 V

    • Extremely low inductance protection path to ground

    • 20 Gbps capable

    • Ultra-small SMD package

    1+:¥1.7063

    100+:¥0.9029

    300+:¥0.5944

    8,995
    数据手册
    PESD3V3L1BBSF
    PESD3V3L1BBSFYL
    Very low clamping bidirectional ESD protection diode

    • Bidirectional ESD protection of one line

    • Ultra small leadless package with a height of 0.3 mm

    • IEC 61000-4-5 (surge): IPP = 24 A peak pulse (average measured)

    • Very low clamping voltage: VCL = 4.8 V typical at 16 A for a TLP pulse

    • Ultra low leakage current: IRM = 1 nA (average measured)

    • ESD protection up to 30 kV

    1+:¥0.8883

    100+:¥0.6883

    300+:¥0.6883

    8,995
    数据手册
    PMCXB290UE
    PMCXB290UEZ
    20 V, complementary N/P-channel Trench MOSFET

    • Low threshold voltage

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection typically > 2 kV HBM

    1+:¥2.4521

    100+:¥1.5255

    300+:¥1.5255

    5,000
    数据手册
    PMDXB590UPE
    PMDXB590UPEZ
    20 V, dual P-channel Trench MOSFET

    • Low threshold voltage

    • Very fast switching

    • Trench MOSFET technology

    • ElectroStatic Discharge (ESD) protection typically > 2 kV HBM

    1+:¥2.3730

    100+:¥1.4803

    300+:¥1.4803

    4,990
    数据手册
    PMEG60T20ELXD
    PMEG60T20ELXDX
    60 V, 2 A Trench Schottky barrier rectifier

    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Power flat lead plastic package with exposed heatsink for optimal thermal connection

    1+:¥2.4182

    100+:¥1.2204

    300+:¥1.2204

    4,500
    数据手册
    PMEG60T20ELXD
    PMEG60T20ELXD-QX
    Q - 60 V, 2 A Trench Schottky barrier rectifier

    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Power flat lead plastic package with exposed heatsink for optimal thermal connection

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.5425

    100+:¥1.2882

    300+:¥1.2882

    4,500
    数据手册
    PMEG60T10ELXD
    PMEG60T10ELXDX
    60 V, 1 A Trench Schottky barrier rectifier

    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Power flat lead plastic package with exposed heatsink for optimal thermal connection

    1+:¥2.2939

    100+:¥1.1526

    300+:¥1.1526

    4,500
    数据手册
    PMEG60T10ELXD
    PMEG60T10ELXD-QX
    Q - 60 V, 1 A Trench Schottky barrier rectifier

    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Power flat lead plastic package with exposed heatsink for optimal thermal connection

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.4069

    100+:¥1.2091

    300+:¥1.2091

    4,500
    数据手册
    PMEG45T20EXD
    PMEG45T20EXD-QX
    Q - 45 V, 2 A Trench MEGA Schottky barrier rectifier

    • Low forward voltage

    • Low Qrr and low IRM

    • Low leakage current

    • High power capability due to clip-bonding technology

    • Power flat lead plastic package with exposed heatsink for optimal thermal connection

    • Qualified according to AEC-Q101 and recommended for use in automotive applications

    1+:¥2.4980

    100+:¥1.2615

    300+:¥1.2615

    4,500
    数据手册