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    共 11件相关商品
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    新品

    GAN3R2
    GAN3R2-100CBEAZ
    100CBE - 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)

    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm

    1+:¥29.8450

    100+:¥28.7037

    300+:¥28.1274

    2,975
    数据手册

    新品

    GAN190
    GAN190-650FBEZ
    650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Low package inductance and low package resistance

    1+:¥23.9221

    100+:¥23.0294

    300+:¥22.5322

    2,490
    数据手册

    新品

    GAN7R0
    GAN7R0-150LBEZ
    150LBE - 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package

    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Land Grid Array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm

    1+:¥22.4531

    100+:¥21.5604

    300+:¥21.1536

    2,489
    数据手册

    新品

    GAN190
    GAN190-650EBEZ
    650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Low package inductance and low package resistance

    1+:¥24.0803

    100+:¥24.0803

    300+:¥24.0803

    2,487
    数据手册

    新品

    GAN140
    GAN140-650EBEZ
    650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Low package inductance and low package resistance

    1+:¥29.6173

    100+:¥25.7866

    300+:¥25.7866

    2,478
    数据手册

    新品

    GAN140
    GAN140-650FBEZ
    650FBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Low package inductance and low package resistance

    1+:¥33.9226

    100+:¥33.9226

    300+:¥33.9226

    2,473
    数据手册

    新品

    GAN080
    GAN080-650EBEZ
    650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Low package inductance and low package resistance

    1+:¥54.9180

    100+:¥52.8049

    300+:¥51.7427

    2,465
    数据手册

    新品

    GAN041
    GAN041-650WSBQ
    650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

    • Ultra-low reverse recovery charge

    • Simple gate drive (0 V to +10 V or 12 V)

    • Robust gate oxide (±20 V capability)

    • High gate threshold voltage (+4 V) for very good gate bounce immunity

    • Very low source-drain voltage in reverse conduction mode

    • Transient over-voltage capability

    1+:¥109.8151

    100+:¥100.0519

    300+:¥93.6222

    565
    数据手册

    新品

    GAN063
    GAN063-650WSAQ
    650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

    • Ultra-low reverse recovery charge

    • Simple gate drive (0 V to +10 V or 12 V)

    • Robust gate oxide (±20 V capability)

    • High gate threshold voltage (+4 V) for very good gate bounce immunity

    • Very low source-drain voltage in reverse conduction mode

    • Transient over-voltage capability (800 V)

    1+:¥127.7934

    100+:¥120.3128

    300+:¥109.0015

    0
    数据手册
    GAN039
    GAN039-650NTBZ
    650NTB - 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
    • Simplified driver design as standard level MOSFET gate drivers can be used:

      • 0 V to 12 V drive voltage

      • Gate threshold voltage VGSth of 4 V

    • Robust gate oxide with ±20 V VGS rating

    • High gate threshold voltage of 4 V for gate bounce immunity

    • Low body diode Vf for reduced losses and simplified dead-time adjustments

    • Transient over-voltage capability for increased robustness

    • CCPAK package technology:

      • Improved reliability, with reduced Rth(j-mb) for optimal cooling

      • Lower inductances for lower switching losses and EMI

      • 150 °C maximum junction temperature

      • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

      • Visual (AOI) soldering inspection, no need for expensive x-ray equipment

      • Easy solder wetting for good mechanical solder joints

    ¥0.0000

    0
    数据手册
    GAN039
    GAN039-650NBBHP
    650NBB - 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
    • Simplified driver design as standard level MOSFET gate drivers can be used:

      • 0 V to 12 V drive voltage

      • Gate threshold voltage VGSth of 4 V

    • Robust gate oxide with ±20 V VGS rating

    • High gate threshold voltage of 4 V for gate bounce immunity

    • Low body diode Vf for reduced losses and simplified dead-time adjustments

    • Transient over-voltage capability for increased robustness

    • CCPAK package technology:

      • Improved reliability, with reduced Rth(j-mb) for optimal cooling

      • Lower inductances for lower switching losses and EMI

      • 150 °C maximum junction temperature

      • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

      • Visual (AOI) soldering inspection, no need for expensive x-ray equipment

      • Easy solder wetting for good mechanical solder joints

    ¥0.0000

    0
    数据手册