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- 商品编号:GAN3R2-100CBEAZ
- 简述:100CBE - 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)
- 描述:
The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance.
- 数据手册:
- 数量：
- 单价:¥29.8450
- 总价:¥0.0000
- 数量单价总价
- 1¥29.8450¥29.8450
- 100¥28.7037¥2,870.3700
- 300¥28.1274¥8,438.2200
特性
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
ESD protection
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm
目标应用
High power density and high efficiency power conversion
AC-to-DC converters, (secondary stage)
- High frequency DC-to-DC converters in 48 V systems
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
LiDAR (non-automotive)
Class D audio amplifiers
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