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    GAN3R2-100CBEAZ
    GAN3R2

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    请参阅产品规格

    • 商品编号:
      GAN3R2-100CBEAZ
    • 简述:
      100CBE - 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)
    • 描述:

      The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance.

    • 数据手册:
    库存：2,975
    • 数量：
    • 单价:
      ¥26.2636
    • 总价:
      ¥0.0000
    价格（包含13%的增值税）
    数量单价总价
    1¥26.2636¥26.2636
    100¥25.2593¥2,525.9300
    300¥24.7521¥7,425.6300

    特性

    • Enhancement mode - normally-off power switch

    • Ultra high frequency switching capability

    • No body diode

    • Low gate charge, low output charge

    • Qualified for standard applications

    • ESD protection

    • RoHS, Pb-free, REACH-compliant

    • High efficiency and high power density

    • Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm

    目标应用

    • High power density and high efficiency power conversion

    • AC-to-DC converters, (secondary stage)

    • High frequency DC-to-DC converters in 48 V systems

    • Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers

    • Datacom and telecom (AC-to-DC and DC-to-DC) converters

    • Motor drives

    • LiDAR (non-automotive)

    • Class D audio amplifiers

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