Bidirectional ESD protection of one line

Ultra small leadless package with a height of 0.3 mm

IEC 61000-4-5 (surge); I_PPM = 8.3 A (average measured)

Very low clamping voltage: V_CL = 8.9 V max for 7.1 A, 8/20 μs pulse

Ultra low leakage current: I_RM < 1 nA

ESD protection up to 27 kV

Bidirectional ESD protection of one line

Extremely low trigger-voltage V_t1 < 5 V

Extremely low diode capacitance C_d = 0.25 pF

Extremely low clamping voltage to protect sensitive I/Os

Extremely low-inductance protection path to ground

ESD protection up to ±15 kV according to IEC 61000-4-2

Ultra small SMD package

Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)

Bidirectional ESD protection of one line

Low diode capacitance C_d = 12 pF

ESD protection up to ±30 kV according to IEC 61000-4-2

Ultra small SMD package

Symmetrical breakdown voltage

Bidirectional ESD protection of one line

Extremely low diode capacitance C_d = 0.25 pF

ESD protection up to ±15 kV according to IEC 61000-4-2

Ultra small SMD package

Unidirectional ESD protection of two lines

Bidirectional ESD protection of one line

Low diode capacitance: C_d ≤ 60 pF

Rated peak pulse power: P_PPM ≤ 40 W

Ultra low leakage current: I_RM ≤ 5 nA

ESD protection up to 30 kV (contact discharge)

IEC 61000-4-2; level 4 (ESD)

IEC 61643-321

Bidirectional ESD protection of two lines

Very low diode capacitance C_d = 0.21 pF

Extremely low clamping to protect sensitive I/Os

Extremely low-inductance protection path to ground

Extremely symmetrical layout

ESD protection up to ±20 kV according to IEC 61000-4-2; surge robustness 8.5 A 8/20 μs

Ultra small SMD package

Placed on one differential line pair, almost no extra PCB space demand for protection

Bidirectional ESD protection of two lines

Very low diode capacitance C_d = 0.26 pF

Extremely low clamping to protect sensitive I/Os

Extremely low-inductance protection path to ground

Extremely symmetrical layout

ESD protection up to ±20 kV according to IEC 61000-4-2

Ultra small SMD package

Placed on one differential line pair, almost no extra PCB space demand for protection

System-level ESD protection for USB 2.0 and USB 3.2 combination, SD-memory card and thunderbolt interfaces

Supports SuperSpeed USB 3.2 at 10 Gbps

All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of ±15 kV exceeding IEC 61000-4-2, level 4

Matched 0.5 mm trace spacing

Line capacitance of only 0.35 pF for each channel

Design-friendly ‘pass-through’ signal routing

Rated peak pulse current: I_PPM = 100 A (8/20 µs pulse)

Rated peak pulse power: P_PPM = 2200 W (8/20 µs pulse)

Dynamic resistance R_dyn = 0.08 Ω

Reverse current: I_RM = 2 nA

Very low package height: 0.29 mm

Average measured peak pulse current: I_PPM = 112.5 A (8/20 μs pulse)

Rated peak pulse current: I_PPM = 100 A (8/20 μs pulse)

Rated peak pulse power: P_PPM = 260 W (10/1000 µs pulse)

Dynamic resistance R_dyn = 0.08 Ω

Very low package height: 0.29 mm

Rated peak pulse current: I_PPM = 32 A (8/20 µs pulse)

Rated peak pulse power: P_PPM = 1850 W (8/20 µs pulse)

Dynamic resistance R_dyn = 0.15 Ω

Reverse current: I_RM = 0.1 nA typ.

Very low package height: 0.29 mm

Rated peak pulse current: I_PPM = 65 A (8/20 µs pulse)

Rated peak pulse power: P_PPM = 1900 W (8/20 µs pulse)

Dynamic resistance R_dyn = 0.11 Ω

Reverse current: I_RM = 0.1 nA

Very low package height: 0.29 mm

Rated peak pulse current: I_PPM = 75 A (8/20 µs pulse)

Rated peak pulse power: P_PPM = 2000 W (8/20 µs pulse)

Dynamic resistance R_dyn = 0.11 Ω

Reverse current: I_RM = 0.1 nA typ.

Very low package height: 0.29 mm

Bidirectional ESD protection of one line

ESD protection up to 9 kV

Ultra low diode capacitance: C_d = 0.9 pF

Very low leakage current: I_RM = 1 nA

Bidirectional ESD protection of one line

Extremely low capacitance: C_d = 0.85 pF

Low clamping voltage: V_CL = 17 V

Ultra low leakage current: I_RM = 1 nA

ESD protection up to 15 kV

IEC 61000-4-2; level 4 (ESD)

Bidirectional ESD protection of one line

Ultra small SMD plastic package

Solderable side pads

Package height typ. 0.37 mm

Low clamping voltage: V_CL = 14 V

ESD protection up to 30 kV

IEC 61000-4-2; level 4 (ESD)

IEC 61000-4-5 (surge); I_PP = 12 A

Max. peak pulse power: P_PPM = 130W

Ultra low leakage current: I_RM = 5 nA

Bidirectional ESD protection of one line

Max. peak pulse power: P_PPM = 130 W

Low clamping voltage: V_(CL)R = 14 V

Ultra low leakage current: I_RM = 5 nA

ESD protection up to 30 kV

IEC 61000-4-2, level 4 (ESD)

IEC 61000-4-5 (surge); I_PPM = 12 A

Ultra small SMD plastic packages

ESD protection of up to two lines

Low diode capacitance C_d = 16 pF

Low clamping voltage V_CL = 10 V

Ultra low leakage current I_RM = 5 nA

ESD protection up to 15 kV

IEC 61000-4-2; level 4 (ESD)

IEC 61000-4-5 (surge); I_PPM = 2.5 A

AEC-Q101 qualified

Bidirectional ESD protection of one line

Femtofarad capacitance: C_d = 400 fF

Low ESD clamping voltage: 30 V at 30 ns and ± 8 kV

Very low leakage current: I_RM < 1 nA

ESD protection up to 10 kV

IEC 61000-4-2; level 4 (ESD)

Unidirectional ESD protection of up to 4 lines

Very high surge robustness; I_PP = 14.2 A (average measured) for 8/20 µs pulse

Very low clamping voltage: V_CL = 3.7 V typ. for 11 A 8/20 µs pulse

ESD protection up to 25 kV

Very low dynamic resistance R_dyn = 0.15 Ω (TLP)