Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)
Bidirectional ESD protection of one line
Low diode capacitance Cd = 12 pF
ESD protection up to ±30 kV according to IEC 61000-4-2
Ultra small SMD package
Symmetrical breakdown voltage
1+:¥1.4820
100+:¥0.6402
300+:¥0.6401
Bidirectional ESD protection of one line
Extremely low diode capacitance Cd = 0.25 pF
ESD protection up to ±15 kV according to IEC 61000-4-2
Ultra small SMD package
1+:¥0.3769
100+:¥0.2792
300+:¥0.2792
Bidirectional ESD protection of two lines
Very low diode capacitance Cd = 0.26 pF
Extremely low clamping to protect sensitive I/Os
Extremely low-inductance protection path to ground
Extremely symmetrical layout
ESD protection up to ±20 kV according to IEC 61000-4-2
Ultra small SMD package
Placed on one differential line pair, almost no extra PCB space demand for protection
1+:¥1.6611
100+:¥0.7650
300+:¥0.7650
Bidirectional ESD protection of two lines
Very low diode capacitance Cd = 0.21 pF
Extremely low clamping to protect sensitive I/Os
Extremely low-inductance protection path to ground
Extremely symmetrical layout
ESD protection up to ±20 kV according to IEC 61000-4-2; surge robustness 8.5 A 8/20 μs
Ultra small SMD package
Placed on one differential line pair, almost no extra PCB space demand for protection
1+:¥1.8984
100+:¥0.9605
300+:¥0.9605
System-level ESD protection for USB 2.0 and USB 3.2 combination, SD-memory card and thunderbolt interfaces
Supports SuperSpeed USB 3.2 at 10 Gbps
All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of ±15 kV exceeding IEC 61000-4-2, level 4
Matched 0.5 mm trace spacing
Line capacitance of only 0.35 pF for each channel
Design-friendly ‘pass-through’ signal routing
1+:¥2.6120
100+:¥1.7080
300+:¥1.4142
ESD protection of one signal line (rail-to-rail configuration)
Ultra low diode capacitance: Cd = 0.6 pF
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 11 A
1+:¥1.8097
100+:¥0.6650
300+:¥0.6650
Rated peak pulse current: IPPM = 100 A (8/20 µs pulse)
Rated peak pulse power: PPPM = 2200 W (8/20 µs pulse)
Dynamic resistance Rdyn = 0.08 Ω
Reverse current: IRM = 2 nA
Very low package height: 0.29 mm
1+:¥2.4860
100+:¥1.0170
300+:¥1.0170
Average measured peak pulse current: IPPM = 112.5 A (8/20 μs pulse)
Rated peak pulse current: IPPM = 100 A (8/20 μs pulse)
Rated peak pulse power: PPPM = 260 W (10/1000 µs pulse)
Dynamic resistance Rdyn = 0.08 Ω
Very low package height: 0.29 mm
1+:¥2.5877
100+:¥1.0735
300+:¥1.0735
Rated peak pulse current: IPPM = 32 A (8/20 µs pulse)
Rated peak pulse power: PPPM = 1850 W (8/20 µs pulse)
Dynamic resistance Rdyn = 0.15 Ω
Reverse current: IRM = 0.1 nA typ.
Very low package height: 0.29 mm
1+:¥2.5990
100+:¥1.0735
300+:¥1.0735
Average measured peak pulse current: IPPM = 43.5 A (8/20 μs pulse)
Rated peak pulse current: IPPM = 37 A (8/20 μs pulse)
Rated peak pulse power: PPPM = 200 W (10/1000 μs pulse)
Dynamic resistance Rdyn = 0.17 Ω
Very low package height: 0.29 mm
1+:¥2.3391
100+:¥1.2317
300+:¥1.2317
Rated peak pulse current: IPPM = 65 A (8/20 µs pulse)
Rated peak pulse power: PPPM = 1900 W (8/20 µs pulse)
Dynamic resistance Rdyn = 0.11 Ω
Reverse current: IRM = 0.1 nA
Very low package height: 0.29 mm
1+:¥1.7402
100+:¥0.7887
300+:¥0.7887
Rated peak pulse current: IPPM = 75 A (8/20 µs pulse)
Rated peak pulse power: PPPM = 2000 W (8/20 µs pulse)
Dynamic resistance Rdyn = 0.11 Ω
Reverse current: IRM = 0.1 nA typ.
Very low package height: 0.29 mm
1+:¥2.5990
100+:¥1.0735
300+:¥1.0735
Bidirectional protection of one line
Reverse stand-off voltage: VRWM = 7 V
Surge robustness: IPPM = 7 A for 8/20 μs pulse
Ultra low clamping voltage: VCL = 9.6 V typ. at IPPM= 7 A
1+:¥0.9515
100+:¥0.3254
300+:¥0.3254
Bidirectional ESD protection of one line
ESD protection up to 9 kV
Ultra low diode capacitance: Cd = 0.9 pF
Very low leakage current: IRM = 1 nA
1+:¥3.3787
100+:¥2.2148
300+:¥1.7515
Bidirectional ESD protection of one line
Extremely low capacitance: Cd = 0.85 pF
Low clamping voltage: VCL = 17 V
Ultra low leakage current: IRM = 1 nA
ESD protection up to 15 kV
IEC 61000-4-2; level 4 (ESD)
1+:¥2.0227
100+:¥0.9921
300+:¥0.9921
Bidirectional ESD protection of up to two lines
Ultra low diode capacitance: Cd = 2.9 pF
Ultra low leakage current: IRM = 5 nA
ESD protection up to 10 kV
IEC 61000-4-2; level 4 (ESD)
1+:¥2.0679
100+:¥0.9515
300+:¥0.9515
Bidirectional ESD protection of one line
Ultra small SMD plastic package
Solderable side pads
Package height typ. 0.37 mm
Low clamping voltage: VCL = 14 V
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 12 A
Max. peak pulse power: PPPM = 130W
Ultra low leakage current: IRM = 5 nA
1+:¥2.1357
100+:¥1.0419
300+:¥1.0419
Bidirectional ESD protection of one line
Max. peak pulse power: PPPM = 130 W
Low clamping voltage: V(CL)R = 14 V
Ultra low leakage current: IRM = 5 nA
ESD protection up to 30 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); IPPM = 12 A
Ultra small SMD plastic packages
1+:¥1.9323
100+:¥0.7650
300+:¥0.7650
ESD protection of up to two lines
Low diode capacitance Cd = 16 pF
Low clamping voltage VCL = 10 V
Ultra low leakage current IRM = 5 nA
ESD protection up to 15 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPPM = 2.5 A
AEC-Q101 qualified
1+:¥1.9436
100+:¥0.8464
300+:¥0.8464
Bidirectional ESD protection of one line
Femtofarad capacitance: Cd = 400 fF
Low ESD clamping voltage: 30 V at 30 ns and ± 8 kV
Very low leakage current: IRM < 1 nA
ESD protection up to 10 kV
IEC 61000-4-2; level 4 (ESD)
1+:¥2.3956
100+:¥1.4803
300+:¥1.3334