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- 商品编号:GAN041-650WSBQ
- 简述:650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
- 描述:
The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
- 数据手册:
- 数量：
- 单价:¥96.6373
- 总价:¥0.0000
- 数量单价总价
- 1¥96.6373¥96.6373
- 100¥88.0457¥8,804.5700
- 300¥82.3875¥24,716.2500
特性
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability
目标应用
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
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