Wide supply voltage range from 2.0 to 6.0 V
CMOS low power dissipation
High noise immunity
Octal bidirectional bus interface
Non-inverting 3-state outputs
Input levels:
For 74HC245: CMOS level
For 74HCT245: TTL level
Complies with JEDEC standards
JESD8C (2.7 V to 3.6 V)
JESD7A (2.0 V to 6.0 V)
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
1+:¥1.7866
100+:¥1.6491
300+:¥1.5804
1+:¥0.4783
100+:¥0.4415
300+:¥0.4231
1+:¥16.0427
100+:¥14.8086
300+:¥14.1916
Average forward current: IF(AV) ≤ 3 A
Reverse voltage: VR ≤ 60 V
Low forward voltage
High power capability due to clip-bond technology
Small and flat lead SMD plastic package
Suitable for both reflow and wave soldering
AEC-Q101 qualified
1+:¥1.0616
100+:¥0.9800
300+:¥0.9391
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +125 °C
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM AEC-Q100-002 revision D exceeds 2500 V
CDM AEC-Q100-011 revision B exceeds 1000 V
DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints
1+:¥2.6241
100+:¥2.4222
300+:¥2.3214
Specified from -40 °C to +125 °C
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM JDS-001 Class 2 exceeds 2500 V
CDM JESD22-C101E exceeds 1000 V
1+:¥2.2820
100+:¥2.1065
300+:¥2.0187
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +125 °C
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM AEC-Q100-002 revision D exceeds 2500 V
CDM AEC-Q100-011 revision B exceeds 1000 V
DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints
1+:¥2.6412
100+:¥2.4381
300+:¥2.3365
Specified from -40 °C to +125 °C
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM JDS-001 Class 2 exceeds 2500 V
CDM JESD22-C101E exceeds 1000 V
1+:¥2.2970
100+:¥2.1203
300+:¥2.0320
Specified from -40 °C to +125 °C
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM JDS-001 Class 2 exceeds 2500 V
CDM JESD22-C101E exceeds 1000 V
1+:¥2.5276
100+:¥2.3331
300+:¥2.2359
Specified from -40 °C to +125 °C
Wide supply range 2.3 V to 5.5 V
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM JDS-001 Class 2 exceeds 2500 V
CDM JESD22-C101E exceeds 1000 V
1+:¥2.2820
100+:¥2.1065
300+:¥2.0187
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply range 2.3 V to 5.5 V
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM AEC-Q100-002 revision D exceeds 2500 V
CDM AEC-Q100-011 revision B exceeds 1000 V
DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints
1+:¥2.6241
100+:¥2.4222
300+:¥2.3214
Specified from -40 °C to +125 °C
Wide supply range 2.3 V to 5.5 V
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM JDS-001 Class 2 exceeds 2500 V
CDM JESD22-C101E exceeds 1000 V
1+:¥2.2970
100+:¥2.1203
300+:¥2.0320
Specified from -40 °C to +125 °C
Wide supply range 2.3 V to 5.5 V
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM JDS-001 Class 2 exceeds 2500 V
CDM JESD22-C101E exceeds 1000 V
1+:¥2.5276
100+:¥2.3331
300+:¥2.2359
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply range 2.3 V to 5.5 V
Low RDSon
Eight Power EDNMOS transistor outputs of 100 mA continuous current
250 mA current limit capability
Output clamping voltage 33 V
30 mJ avalanche energy capability
Enhanced cascading for multiple stages
All registers cleared with single input
Low power consumption
ESD protection:
HBM AEC-Q100-002 revision D exceeds 2500 V
CDM AEC-Q100-011 revision B exceeds 1000 V
DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints
1+:¥2.9104
100+:¥2.6865
300+:¥2.5746
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 3.0 V to 15.0 V
CMOS low power dissipation
High noise immunity
Fully static operation
5 V, 10 V, and 15 V parametric ratings
Standardized symmetrical output characteristics
Complies with JEDEC standard JESD 13-B
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 Ω)
1+:¥2.2277
100+:¥2.0686
300+:¥1.9890
Wide supply voltage range from 3.0 V to 15.0 V
CMOS low power dissipation
High noise immunity
Fully static operation
5 V, 10 V, and 15 V parametric ratings
Standardized symmetrical output characteristics
Complies with JEDEC standard JESD 13-B
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
1+:¥1.8339
100+:¥1.7029
300+:¥1.6375
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
1+:¥9.4798
100+:¥8.7505
300+:¥8.3860
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C
1+:¥13.7907
100+:¥12.7299
300+:¥12.1995
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
1+:¥7.9527
100+:¥7.3410
300+:¥7.0350
1+:¥11.3971
100+:¥10.5204
300+:¥10.0821