- 产品
- 描述
- 价格
- 库存
- 数据手册
- 操作
PMBT4401,18540 V, 600 mA NPN switching transistorHigh current (max. 600 mA)
Low voltage (max. 40 V)
AEC-Q101 qualified
1+:¥1.0370
100+:¥0.5635
300+:¥0.5635
- 30,000
- 数据手册
PMBT2222AMYL40 V, 600 mA NPN switching transistorHigh current (max. 600 mA)
Low voltage (max. 40V)
Leadless ultra small SMD plastic package
Low package height of 0.50 mm
Power dissipation comparable to SOT23
1+:¥1.1543
100+:¥0.4368
300+:¥0.4367
- 30,000
- 数据手册
BC807-25LR45 V, 500 mA PNP general-purpose transistorsHigh current
Three current gain selections
AEC-Q101 qualified
1+:¥0.7729
100+:¥0.4882
300+:¥0.4882
- 30,000
- 数据手册
BC847BVN,11545 V, 100 mA NPN/PNP general purpose transistor300 mW total power dissipation
Very small 1.6 mm x 1.2 mm ultra thin package
Replaces two SC-75/SC-89 packaged transistors on same PCB area
Reduced required PCB area
Reduced pick and place costs
1+:¥2.2617
100+:¥0.9577
300+:¥0.9577
- 16,000
- 数据手册
PMP4201V,11545 V, 100 mA NPN/NPN matched double transistorCurrent gain matching
Base-emitter voltage matching
Application-optimized pinout
1+:¥2.7024
100+:¥1.9905
300+:¥1.5385
- 12,000
- 数据手册
BC857A,21565 V, 100 mA PNP general-purpose transistorsLow current (max. 100 mA)
Low voltage (max. 65 V)
1+:¥0.6887
100+:¥0.2413
300+:¥0.2413
- 12,000
- 数据手册
BC847BV,115NPN general purpose double transistor300 mW total power dissipation
Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
Excellent coplanarity due to straight leads
Low collector capacitance
Improved thermal behaviour due to flat leads
Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors
Reduces required board space
Reduces pick and place costs
1+:¥2.4086
100+:¥1.4594
300+:¥1.4594
- 12,000
- 数据手册
PMBT2222AMBYL40 V, 600 mA NPN switching transistorHigh current (max. 600 mA)
Low voltage (max. 40V)
Leadless ultra small SMD plastic package
Low package height of 0.37 mm
Power dissipation comparable to SOT23
1+:¥1.3899
100+:¥0.6995
300+:¥0.6995
- 10,000
- 数据手册
PDTC115EM,315NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhmBuilt-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
AEC-Q101 qualified
1+:¥0.4836
100+:¥0.3869
300+:¥0.3869
- 10,000
- 数据手册
PDTC114YMB,315NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ100 mA output current capability
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
AEC-Q101 qualified
Leadless ultra small SMD plastic package
Low package height of 0.37 mm
1+:¥1.6611
100+:¥0.6351
300+:¥0.6351
- 10,000
- 数据手册
PDTC114YM,31550 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1+:¥1.7741
100+:¥0.6836
300+:¥0.6837
- 10,000
- 数据手册
PDTC114EM,315NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1+:¥1.8984
100+:¥0.6836
300+:¥0.6837
- 10,000
- 数据手册
PDTA144EM,315PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1+:¥1.9210
100+:¥0.6836
300+:¥0.6837
- 10,000
- 数据手册
PDTA143ZM,31550 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1+:¥1.6272
100+:¥0.6667
300+:¥0.6667
- 10,000
- 数据手册
PDTA143EM,315PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1+:¥1.6272
100+:¥1.0328
300+:¥1.0328
- 10,000
- 数据手册
PDTA123YM,315PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhmBuilt-in bias resistors
Reduces component count
Simplifies circuit design
Reduces pick and place costs
AEC-Q101 qualified
1+:¥0.4654
100+:¥0.3723
300+:¥0.3723
- 10,000
- 数据手册
PDTA123TM,315PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openBuilt-in bias resistors
Reduces component count
Simplifies circuit design
Reduces pick and place costs
100 mA output current capability
AEC-Q101 qualified
1+:¥1.6272
100+:¥1.0328
300+:¥1.0328
- 10,000
- 数据手册
PBSS3515M,31515 V, 0.5 A PNP low VCEsat (BISS) transistorLow collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to reduced heat generation
Reduced printed-circuit board requirements.
AEC-Q101 qualified
1+:¥2.1018
100+:¥0.7978
300+:¥0.7978
- 10,000
- 数据手册
PBSS2515M,31515 V, 0.5 A NPN low VCEsat (BISS) transistorLow collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to reduced heat generation
Reduced printed-circuit board requirements.
AEC-Q101 qualified
1+:¥2.1018
100+:¥0.7978
300+:¥0.7978
- 10,000
- 数据手册
PDTC124EU,11550 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
1+:¥0.7701
100+:¥0.4447
300+:¥0.4447
- 9,000
- 数据手册