购物车
BAS116LS
分享
图像仅供参考
请参阅产品规格
- 商品编号:BAS116LSYL
- 简述:Low-leakage diode
- 描述:
Low-leakage diode in an ultra small DFN1006BD-2 (SOD882BD) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.
- 数据手册:
库存：10,000
- 数量：
- 单价:¥1.2132
- 总价:¥0.0000
价格（包含13%的增值税）
- 数量单价总价
- 1¥1.2132¥1.2132
- 100¥0.6017¥60.1700
- 300¥0.6017¥180.5100
特性
Switching time: max. trr = 3 µs
Low leakage current: max. IR = 5 nA
Repetitive peak reverse voltage: VRRM ≤ 85 V
Low capacitance typical: Cd = 2 pF
Ultra small and leadless SMD plastic package
Suitable for Automatic Optical Inspection (AOI) of solder joint
目标应用
Low-leakage current applications
General-purpose switching
数据手册
- 新品
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package¥96.6373 - 新品
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET¥112.4582 - 新品
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥48.3278 - 新品
GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥26.0632 - 新品
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥21.1907 - 新品
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package¥21.0514 - 新品
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode¥21.0331 - 新品
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P¥16.5854