购物车
BAS21AVD
分享
图像仅供参考
请参阅产品规格
- 商品编号:BAS21AVD,135
- 简述:High-voltage switching diodes
- 描述:
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small Surface-Mounted Device (SMD) plastic package.
- 数据手册:
库存：10,000
- 数量：
- 单价:
¥2.4661¥0.0000
- 总价:¥0.0000
特性
High switching speed: trr ≤ 50 ns
Reverse voltage: VR ≤ 200 V
Repetitive peak reverse voltage: VRRM ≤ 250 V
Small SMD plastic package
Low capacitance: Cd ≤ 5 pF
Repetitive peak forward current: IFRM ≤ 1 A
AEC-Q101 qualified
目标应用
High-voltage switching in surface-mounted circuits
Automotive
Communication
数据手册
- 新品
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package¥96.6373 - 新品
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET¥112.4582 - 新品
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥48.3278 - 新品
GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥26.0632 - 新品
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥21.1907 - 新品
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package¥21.0514 - 新品
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode¥21.0331 - 新品
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P¥16.5854