购物车
BC857BMB,315
分享
图像仅供参考
请参阅产品规格
- 商品编号:BC857BMB,315
- 简述:45 V, 100 mA PNP general-purpose transistor
- 描述:
PNP general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
NPN complement: BC847BMB
- 数据手册:
库存：10,000
- 数量：
- 单价:¥1.1336
- 总价:¥0.0000
价格（包含13%的增值税）
- 数量单价总价
- 1¥1.1336¥1.1336
- 100¥0.4942¥49.4200
- 300¥0.4941¥148.2300
特性
Leadless ultra small SMD plastic package
Power dissipation comparable to SOT23
Low package height of 0.37 mm
AEC-Q101 qualified
目标应用
General-purpose switching and amplification
Mobile applications
数据手册
- 新品
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package¥96.6373 - 新品
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET¥112.4582 - 新品
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥48.3278 - 新品
GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥26.0632 - 新品
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥21.1907 - 新品
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package¥21.0514 - 新品
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode¥21.0331 - 新品
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P¥16.5854