购物车
PDTC143T series
分享
图像仅供参考
请参阅产品规格
- 商品编号:PDTC143TM,315
- 简述:NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open
- 描述:
NPN resistor-equipped transistor (see �Simplified outline, symbol and pinning� for package details).
- 数据手册:
库存：10,000
- 数量：
- 单价:¥0.4334
- 总价:¥0.0000
价格（包含13%的增值税）
- 数量单价总价
- 1¥0.4334¥0.4334
- 100¥0.1543¥15.4300
- 300¥0.1543¥46.2900
特性
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
AEC-Q101 qualified
目标应用
General purpose switching and amplification
Inverter and interface circuits
Circuit applications.
数据手册
- 新品
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package¥96.6373 - 新品
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET¥112.4582 - 新品
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥48.3278 - 新品
GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥26.0632 - 新品
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥21.1907 - 新品
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package¥21.0514 - 新品
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode¥21.0331 - 新品
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P¥16.5854