图像仅供参考
请参阅产品规格
- 商品编号:PESD5V0R1BCSFYL
- 简述:Extremely low clamping bidirectional ESD protection diode
- 描述:
Extremely low clamping, extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless, ultra-small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients.
- 数据手册:
- 数量：
- 单价:¥1.5015
- 总价:¥0.0000
- 数量单价总价
- 1¥1.5015¥1.5015
- 100¥0.7946¥79.4600
- 300¥0.5231¥156.9300
特性
Bidirectional ESD protection of one line
Extremely low diode capacitance, Cd = 0.085 pF at 10 GHz
Extremely low insertion loss: -0.25 dB at 10 GHz
Extremely low return loss: -19.4 dB at 10 GHz
Extremely low clamping voltage to protect sensitive transceivers
Extremely low leakage current < 1 nA at 5 V
Extremely low inductance protection path to ground
20 Gbps capable
Ultra-small SMD package
目标应用
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
USB4, USB3.2, Thunderbolt4 and HDMI2.1 data lines
- 新品
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package¥96.6373 - 新品
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET¥112.4582 - 新品
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥48.3278 - 新品
GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥26.0632 - 新品
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥21.1907 - 新品
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package¥21.0514 - 新品
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode¥21.0331 - 新品
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P¥16.5854