购物车
PMEG100T20ELXDX
分享
图像仅供参考
请参阅产品规格
- 商品编号:PMEG100T20ELXDX
- 简述:100 V, 2 A Trench Schottky barrier rectifier
- 描述:
Trench Schottky barrier rectifier encapsulated in a CFP2-HP (SOD323HP) power flat lead Surface-Mounted Device (SMD) plastic package.
- 数据手册:
库存：4,500
- 数量：
- 单价:¥0.6122
- 总价:¥0.0000
价格（包含13%的增值税）
- 数量单价总价
- 1¥0.6122¥0.6122
- 100¥0.3076¥30.7600
- 300¥0.3076¥92.2800
特性
Low forward voltage
Low Qrr and low IRM
Low leakage current
High power capability due to clip-bonding technology
Power flat lead plastic package with exposed heatsink for optimal thermal connection
目标应用
High efficiency DC-to-DC conversion
LED lighting
Switch mode power supply
Freewheeling applications
Reverse polarity protection
OR-ing
数据手册
- 新品
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package¥96.6373 - 新品
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET¥112.4582 - 新品
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥48.3278 - 新品
GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥26.0632 - 新品
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥21.1907 - 新品
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package¥21.0514 - 新品
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode¥21.0331 - 新品
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P¥16.5854