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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Enhanced power dissipation capability of 1200 mW
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Relay driver
High-speed line driver
Low-side load switch
Switching circuits