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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Very fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Ultra thin package profile of 0.37 mm
Relay driver
High-speed line driver
Low-side load switch
Switching circuits