图像仅供参考
请参阅产品规格
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Ultra thin package profile of 0.37 mm
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits