购物车
PNE20010ERX
分享
图像仅供参考
请参阅产品规格
- 商品编号:PNE20010ERX
- 简述:200 V, 1 A hyperfast recovery rectifier
- 描述:
High power density, hyperfast recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead SOD123W Surface-Mounted Device (SMD) plastic package.
- 数据手册:
库存：3,000
- 数量：
- 单价:¥1.6507
- 总价:¥0.0000
价格（包含13%的增值税）
- 数量单价总价
- 1¥1.6507¥1.6507
- 100¥1.3623¥136.2300
- 300¥1.1038¥331.1400
特性
Reverse voltage VR ≤ 200 V
Forward current IF ≤ 1 A
Hyperfast recovery time trr ≤ 25 ns
Pt doped lifetime control
Low inductance
Small and flat lead SMD plastic package
Package height typ. 1 mm
High power capability due to clip-bond technology
Planar die design
Capable for reflow and wave soldering
AEC-Q101 qualified
目标应用
General-purpose rectification
Reverse polarity protection
Hyperfast switching
Freewheeling applications
数据手册
- 新品
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package¥96.6373 - 新品
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET¥112.4582 - 新品
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥48.3278 - 新品
GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥26.0632 - 新品
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥21.1907 - 新品
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package¥21.0514 - 新品
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode¥21.0331 - 新品
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P¥16.5854